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The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee

Theses and Dissertations

This study on praseodymium Pr luminescence in Al_xGa_1-xAs was conducted to enhance the understanding of the excitation mechanism. Pr was implanted at 390 keV with doses from 5 x 10¹² to 5 x 10¹³ sq cm into Al_xGa_1-xAs x0.0 to 0.50 wafers which were annealed using the rapid thermal annealing RTA method. Low temperature photoluminescence PL was conducted using an Ar-ion laser and Ge detector. PL emissions of Pr from all hosts include peaks near 1.3 and 1.6 µm which are assigned to the intra-4f transitions of 1G4 yielding 3H5 …