Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

1988

Journal of the Microelectronic Engineering Conference

BN-975

Articles 1 - 1 of 1

Full-Text Articles in Engineering

Boron Solid Source Characterization, Kelly Baycura Jan 1988

Boron Solid Source Characterization, Kelly Baycura

Journal of the Microelectronic Engineering Conference

Standard Oil’s BN—975 planar diffusion sources were used to fabricate integrated resistors. Dopant transfer was done in a N2:02:H2 ambient at 975 C. Two methods of removing the crystal defect layer formed at the surface, low temperature oxidation (LTO) and a nitric acid soak, were evaluated. Successful layer removal was achieved with the LTO. The nitric acid soak met with limited success.