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Full-Text Articles in Engineering
Dreams Of Molecular Beams: Indium Gallium Arsenide Tensile-Strained Quantum Dots And Advances Towards Dynamic Quantum Dots (Moleculare Radiorum Somnia: Indii Gallii Arsenicus Tensa Quanta Puncta Et Ad Dinamicae Quantae Puntae Progressus), Kevin Daniel Vallejo
Boise State University Theses and Dissertations
Through the operation of a molecular beam epitaxy (MBE) machine, I worked on developing the homoepitaxy of high quality InAs with a (111)A crystallographic orientation. By tuning substrate temperature, we obtained a transition from a 2D island growth mode to step- ow growth. Optimized MBE parameters (substrate temperature = 500 °C, growth rate = 0.12 ML/s and V/III ratio ⩾ 40) lead to growth of extremely smooth InAs(111)A films, free from hillocks and other 3D surface imperfections. We see a correlation between InAs surface smoothness and optical quality, as measured by photoluminescence spectroscopy. This work establishes InAs(111)A as a platform …
(111)-Oriented Gallium Arsenide Tensile-Strained Quantum Dots Tailored For Entangled Photon Emission, Christopher Schuck
(111)-Oriented Gallium Arsenide Tensile-Strained Quantum Dots Tailored For Entangled Photon Emission, Christopher Schuck
Boise State University Theses and Dissertations
The use of molecular beam epitaxy (MBE) to create quantum dots (QDs) embedded in solid-state semiconductor media has been at the forefront of novel and record-breaking optoelectronic device development for many years. However, the wide range of semiconductor fabrication capabilities and the non-equilibrium growth parameters inherent to MBE mean that there are still many QD research frontiers that are yet to be explored.
This work focuses on a recently discovered method that permits, for the first time, the growth of QDs under tensile strain on non-(100) surfaces. My research explores the first (and currently only) optically active materials system for …