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Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao
Switching Trajectory Control For High Voltage Silicon Carbide Power Devices With Novel Active Gate Drivers, Shuang Zhao
Graduate Theses and Dissertations
The penetration of silicon carbide (SiC) semiconductor devices is increasing in the power industry due to their lower parasitics, higher blocking voltage, and higher thermal conductivity over their silicon (Si) counterparts. Applications of high voltage SiC power devices, generally 10 kV or higher, can significantly reduce the amount of the cascaded levels of converters in the distributed system, simplify the system by reducing the number of the semiconductor devices, and increase the system reliability.
However, the gate drivers for high voltage SiC devices are not available on the market. Also, the characteristics of the third generation 10 kV SiC MOSFETs …