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Full-Text Articles in Engineering
Mitigation Of Electromigration In Metal Interconnects Passivated By Ångstrom-Thin 2d Materials, Yunjo Jeong
Mitigation Of Electromigration In Metal Interconnects Passivated By Ångstrom-Thin 2d Materials, Yunjo Jeong
USF Tampa Graduate Theses and Dissertations
Electromigration in metal interconnects remains one of the most prominent challenges in the state-of-the-art semiconductor industry. A phenomenon defined as the momentum transfer from electrons in an electric current to the metal atoms in a conductor, electromigration creates voids and hillocks that ultimately cause failures in nanoelectronics due to short or open circuits. Additionally, electromigration induces undesirable diffusion of metal atoms into the dielectric material, forcing the need for a barrier material that can mitigate such adverse effects of the phenomenon. However, extremely tight dimensional control of modern transistor designs imposes reduced dimensions of the interconnects in order to accommodate …
Deposition And Characterization Of Indium Nitride And Aluminum Nitride Thin Films By Reactive Sputtering, Sushma Swaraj Atluri
Deposition And Characterization Of Indium Nitride And Aluminum Nitride Thin Films By Reactive Sputtering, Sushma Swaraj Atluri
Electrical & Computer Engineering Theses & Dissertations
Intensive research has been carried out on III-V semiconductors for over a century due to their various applications in the field of Microelectronics, Optics, and Photonics. Among III-V materials, the III-nitrides, for example Aluminum Nitride, Indium Nitride, Gallium Nitride and their ternary alloys are known for their unique properties. All the III-Nitride Compounds are direct bandgap semiconductors with a bandgap ranging from 0.7 eV to 6.2 eV covering the entire visible region and extending to the UV region as well. Despite having many applications, fabricating good quality thin films without defects is quite a challenge. They are typically grown using …
Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis
Ii-Vi Type-Ii Quantum Dot Superlattices For Novel Applications, Vasilios Deligiannakis
Dissertations, Theses, and Capstone Projects
In this thesis, we discuss the growth procedure and the characterization results obtained for epitaxially grown submonolayer type-II quantum dot superlattices made of II-VI semiconductors. We have investigated the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots and the use of (Zn)CdTe/ZnCdSe QDs for intermediate band solar cell (IBSC). Samples with a higher quantum dot density exhibit longer electron spin lifetimes, up to ~1 ns at low temperatures. Tellurium isoelectronic centers, which form in the ZnSe spacer regions as a result of the growth conditions, were also probed. A new growth sequence for type-II (Zn)CdTe/ZnCdSe (QDs) was …
Tailoring The Grain Boundaries Of Wide-Bandgap Perovskite Solar Cells By Molecular Engineering, Khalid Emshadi
Tailoring The Grain Boundaries Of Wide-Bandgap Perovskite Solar Cells By Molecular Engineering, Khalid Emshadi
Electronic Theses and Dissertations
Due to the attraction of fabricating highly efficient tandem solar cells, wide-bandgap perovskite solar cells have attracted substantial interest in recent years. However, polycrystalline perovskite thin-films show the existence of trap states at grain boundaries, which diminish the optoelectronic properties of the perovskite and thus remains a challenge. This research demonstrates a one-step solution-processing of the [MA0.9Cs0.1Pb(I0.6Br0.4)3] wide-bandgap perovskite using Phenylhydrazine Iodide with amino groups to successfully passivate the trap density within grain boundaries and increase the perovskite grain size. The reinforced morphology and grain boundaries treatment considerably enhanced the photovoltaic performance …