Engineering Commons^™

Methods For Coating Quartz Crystals, William Patrick

Senior Honors Projects, 2010-2019

The goal of this project was to evaluate the effectiveness a procedure that can be used to coat quartz crystal microbalance crystals with titanium dioxide. A successful suspension was created by suspending titanium dioxide powder in poly(acrlic) acid and mixed in an ultra-sonication bath. By utilizing a spin-coater, the TiO₂ suspension was successfully dispensed onto a QCM crystal and verified using a surface profiler and microscope. However, after QCM testing, there was no evidence that supports the TiO₂ precursor aiding in photocatalytic reactions.

Control Of Cation Ordering In Zinc Tin Nitride And In-Situ Monitoring Of Growth, Brian Christopher Durant

Masters Theses

Semiconducting materials with a band gap around 1.5 eV are very much sought after due to their close match to the solar spectrum. However, some compounds that have shown promise for highly efficient solar cells contain rare, expensive, and sometimes toxic elements, such as indium and gallium. As such, a search for earth abundant materials has become more prominent recently. One such earth abundant semiconducting material that has garnered interest is ZnSnN₂. It has been shown through previous studies that there is the possibility of continuously tuning the band gap between 1.0 and 2.0 eV by controlling the …

Electrocatalyst Decorated Hematite Nanowire Arrays For Photoelectrochemical Water Splitting., Erica James

College of Arts & Sciences Senior Honors Theses

Solar power is a leading option for renewable energy. However, storing solar energy is one of the leading pitfalls in this field, and one viable option is to store solar energy in chemical bonds, for example in H2 via water splitting. Hematite, α-Fe2O3, is one of the possible semiconductors that has been researched to drive photoelectrolysis of water. Hematite alone is not a decent material for photoelectrolysis because of the large activation energy required to begin the reaction. To make hematite more useful for photoelectrolysis an electrocatalyst, such as nickel oxide, is needed. In this experiment, nickel (II) nitrate was …

Molecular Dynamics Study On Defect Reduction Strategies Towards The Fabrication Of High Performance Cd1-Xznxte/Cds Solar Cells, Jose Juan Chavez

Open Access Theses & Dissertations

Cadmium Telluride is a material widely used in terrestrial thin film photovoltaic applications due to its nearly ideal band gap (~1.5 eV) and high absorption coefficient. Due to its low manufacturing cost, this technology has the potential to become a significant energy resource if higher energy conversion efficiencies are achieved. However, the module efficiencies (~14%) are still far from the theoretical maximum (~30%) for this material in a single junction configuration. The reason behind this low performance is attributed to the high number of defects that are present within the device materials. The physics behind the formation mechanisms of these …

Exchange Mechanisms In Macroscopic Ordered Organic Magnetic Semiconductors, Naveen Rawat

Graduate College Dissertations and Theses

Small molecule organic semiconductors such as phthalocyanines and their derivatives represent a very interesting alternative to inorganic semiconductor materials for the development of flexible electronic devices such as organic thin field effect transistors, organic Light Emitting Diodes and photo-voltaic cells. Phthalocyanine molecules can easily accommodate a variety of metal atoms as well in the central core of the molecule, resulting in wide range of magnetic properties. Exploration of optical properties of organic crystalline semiconductors thin films is challenging due to sub-micron grain sizes and the presence of numerous structural defects, disorder and grain boundaries. However, this can be overcome by …

Two-Photon Absorption In Bulk Semiconductors And Quantum Well Structures And Its Applications, Himansu Pattanaik

Electronic Theses and Dissertations

The purpose of this dissertation is to provide a study and possible applications of two-photon absorption (2PA), in direct-gap semiconductors and quantum-well (QW) semiconductor structures. One application uses extremely nondegenerate (END) 2PA, for mid-infrared (mid-IR) detection in uncooled semiconductors. The use of END, where the two photons have very different energies gives strong enhancement comapared to degenerate 2PA. This END-2PA enhanced detection is also applied to mid-IR imaging and light detection and ranging (LIDAR) in uncooled direct-gap photodiodes. A theoretical study of degenerate 2PA (D-2PA) in quantum wells, QWs, is presented, along with a new theory of ND 2PA in …

Optical Metrology For Directed Self-Assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry, Dhairya J. Dixit

Legacy Theses & Dissertations (2009 - 2024)

The semiconductor industry continues to drive patterning solutions that enable devices with higher memory storage capacity, faster computing performance, lower cost per transistors, and higher transistor density. These developments in the field of semiconductor manufacturing along with the overall minimization of the size of transistors require cutting-edge metrology tools for characterization.

Nanoparticle Generation And Interactions With Surfaces In Vacuum Systems, Yashdeep Khopkar

Legacy Theses & Dissertations (2009 - 2024)

Extreme ultraviolet lithography (EUVL) is the most likely candidate as the next generation technology beyond immersion lithography to be used in high volume manufacturing in the semiconductor industry. One of the most problematic areas in the development process is the fabrication of mask blanks used in EUVL. As the masks are reflective, there is a chance that any surface aberrations in the form of bumps or pits could be printed on the silicon wafers. There is a strict tolerance to the number density of such defects on the mask that can be used in the final printing process. Bumps on …

Design And Development Of Stress Engineering Techniques For Iii-Nitride Epitaxy On Si, Jeff Leathersich

Legacy Theses & Dissertations (2009 - 2024)

III-Nitrides have been a heavily researched material system for decades. Their material properties are favorable for a number of applications, most commonly in the optoelectronic and power device industry. Currently a majority of commercialized devices are fabricated on sapphire and SiC substrates but these are expensive and limit the widespread commercialization of the technology. There is substantial ongoing research geared toward the development of GaN on Si substrates because of the significant cost saving that would be realized through the inexpensive, large wafer and maturity of Si fabrication. Significant challenges with the deposition of GaN on Si have, thus far, …

An Assessment Of Critical Dimension Small Angle X-Ray Scattering Metrology For Advanced Semiconductor Manufacturing, Charles Michael Settens

Legacy Theses & Dissertations (2009 - 2024)

Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty.

Gallium Nitride: Analysis Of Physical Properties And Performance In High-Frequency Power Electronic Circuits, Dalvir K. Saini

Browse all Theses and Dissertations

Gallium nitride (GaN) technology is being adopted in a variety of power electronic applications due to their high efficiencies even at high switching speeds. In comparison with the silicon (Si) transistors, the GaN-based devices exhibit lower on-state resistance and parasitic capacitances. The thermal performance of the GaN transistors are also better than the Si counterparts due to their higher junction temperature and lower temperature-coefficient of on-resistance. These unique properties make the gallium-nitride power transistors an appropriate selection for power electronic converters and radio-frequency power amplifiers, where size, efficiency, power density, and dynamic performance are major requirements.

Foreseeing the immense capabilities …