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Full-Text Articles in Engineering
Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale
Study Of Design Tradeoffs Of Dram And Sram Memories, Using Hspice Computer Simulation, Bageshri Kale
Theses
Semiconductor random access memories are complex systems that can be described by performance parameters such as memory cycle time, access delays, storage capacity, bit packing density, chip area and retention time. In this thesis, tradeoffs between cycle time, chip area, and storage size as reflected by bit line capacitance (Cbl) were studied as a function of particular design variables: memory cell capacitance (Cc); CMOS flip-flop sense amplifier (SA) transistor sizes; and size of precharge (PC), and word line (WL) switches. Performance was optimized using circuit simulation software, HSPICE, to observe DRAM and SRAM waveforms. With TSMC 0.18 micron technology, minimum …
Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips
Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips
Theses and Dissertations
Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …