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Synthesis And Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride And Titanium Nitride Films, Narahari Ramanuja
Synthesis And Characterization Of Low Pressure Chemically Vapor Deposited Boron Nitride And Titanium Nitride Films, Narahari Ramanuja
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This study has investigated the interrelationships governing the growth kinetics, resulting compositions, and properties of boron nitride (B-C-N-H) and titanium nitride (Ti-N-Cl) films synthesized by low pressure chemical vapor deposition (LPCVD) using ammonia (NH3)/triethylamine-borane and NH3/titanium tetrachloride as reactants, respectively.Several analytical methods such as the FTIR, UVNisible spectroscopy, XPS, AES, RBS, SEM, and XRD were used to study the stoichiometry and structure of the deposited films.
The B-N-C-H films were synthesized over a temperature range of 300 to 8500C at various flow rate ratios of the reactants and total pressure range of 50 to 150 mTorr. …