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Optical Detection Properties Of Silicon-Germanium Quantum Well Structures, Michael R. Gregg

Theses and Dissertations

A study has been carried out on Si/SiGe multi quantum well structures to determine their applicability as normal incidence infrared detectors in the spectral range of 2-12 micrometers. The research effort was primarily experimental; however, extensive calculations were performed to initially explain the experimental data and then used to design subsequent structures. Multiple quantum well structures grown on both Si[001] and Si[110] substrates via molecular beam epitaxy were studied by photoluminescence, absorption, and photoresponse measurements over a wide parameter space. Variables included quantum well depth and width, well doping, number of wells and growth temperature. Well widths were varied from …