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Electrical Characteristics Of Novel Heterojunction Diodes Of Thin Relaxation Semiconductors/P-Si/, Hyung Joo Lee

Dissertations

The relaxation semiconductor is defined as one in which the dielectric relaxation time (τd;resistivity times permittivity) is greater than lifetime (τo). Non-hydrogenated amorphous Silicon Carbide (SiC) and KrF excimer laser induced disordered Si were used for the relaxation semiconductors. Both semiconductors have high resistivity, wide energy gap, and numerous defects. A novel diode, consisting of those semiconductors on p-type crystalline Silicon (c-Si), was fabricated. In the diode structure, an injecting contact was made on the relaxation material and a Schottky barrier contact was made on the c-Si.

Electrical characteristics of both diodes were found to have interesting …