Engineering Commons^™

Fabrication And Characterization Of Gated Silicon Field Emission Micro Triodes, Nanchou Liu

Dissertations

This dissertation describes the fabrication technology and characterization of a gated silicon field emission micro triode that is a novel electron tunneling device for generating electron emission into a vacuum. Conic (point) and wedge field emitter structures with nm-scale radii were fabricated in silicon and GaAs by etching, MOCVD and dry oxidation. A new self-aligned process was developed for fabrication of vertical field emission triodes. This process allows control of gate opening to less than 0.5 μm diameter without the need of electron-beam writing. It also provides a planar gate electrode and a thick dielectric layer for reduction of the …

Process Technology And Characterization For Field Emission Devices, Jong Min Kim

Dissertations

Vacuum microelectronics is a new research field which applies semiconductor process technology to the fabrication of micron-dimensioned electron devices. Vacuum microelectronics is made possible by advances in microstructures and nanofabrication technology. Vacuum microelectronic devices are further characterized by a wide operating temperature range, nuclear radiation immunity, higher emission current density potential, and lower power consumption than that of thermionic emitters. The low mass of the electron provides a higher carrier mobility than GaAs or any solid state device. These features offer the potentials for wide variety of applications.

In this dissertation. electron field emission structures applicable to a variety of …