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Hole Mobility In Strained Ge And Iii-V P-Channel Inversion Layers With Self-Consistent Valence Subband Structure And High-K Insulators, Yan Zhang

Open Access Dissertations

We present a comprehensive investigation of the low-¯eld hole mobility in strained Ge and III-V (GaAs, GaSb, InSb and In1¡xGaxAs) p-channel inversion layers with both SiO2 and high-· insulators. The valence (sub)band structure of Ge and III-V channels, relaxed and under strain (tensile and compressive) is calculated using an effcient self-consistent method based on the six-band k ¢ p perturbation theory. The hole mobility is then computed using the Kubo-Greenwood formalism accounting for non-polar hole-phonon scattering (acoustic and optical), surface roughness scatter- ing, polar phonon scattering (III-Vs only), alloy scattering (alloys only) and remote phonon scattering, accounting for multi-subband dielectric …