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Progress Towards Competitive Iii-V Infrared Detectors: Fundamental Material Characterization And Techniques, Emil A. Kadlec

Electrical and Computer Engineering ETDs

Measurement of recombination mechanisms provides critical feedback on the material quality of semiconductors. Strained layer type-II superlattices (T2SLs) have seen a recent increase in interest as they possess intriguing properties making them prime candidates for use as infrared detectors. As T2SL-based detectors approach the performance of industry-standard Hg_1-xCd_xTe photodetectors, measurement of the carrier lifetime is becoming increasingly important. A comparison of the lifetime measurement techniques time-resolved photoluminescence, frequency-modulated photoluminescence, time-resolved microwave reflectance, and frequency-modulated conductance is made. Although photoluminescence-based measurement techniques are more common in literature, it is shown that the microwave reflectance-based measurement technique is …