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A Study Of Drift Mobility In Neutron Irradiated N-Type Germanium, William H. Closser

Electrical and Computer Engineering ETDs

With the advent of the transistor in the late 1940's have come an entirely new field of engineering and a greatly renewed interest in solid state physics. This paper will be concerned in general with the electrical properties of these materials, and specifically drift mobility of the minority carriers in n-type germanium. The minority carrier in n-type material is the hole. The definition of drift mobility is: the mean carrier velocity per unit electric field.