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Tensile-Strained Germanium Quantum Dots Grown On Indium Aluminum Arsenide (111)A And (110) By Molecular Beam Epitaxy, Kathryn Eva Sautter
Tensile-Strained Germanium Quantum Dots Grown On Indium Aluminum Arsenide (111)A And (110) By Molecular Beam Epitaxy, Kathryn Eva Sautter
Boise State University Theses and Dissertations
Molecular beam epitaxy (MBE) enables the growth of semiconductor nanostructures known as tensile-strained quantum dots (TSQDs). The highly tunable nature of TSQD properties means that they are of interest for a wide variety of applications including for infrared (IR) lasers and light-emitting diodes (LEDs), improved tunnel junction efficiency in multijunction solar cell technology, quantum key encryption, and entangled photon emission. In this project, I focus on one of the most technologically important materials, germanium (Ge). Ge has a high gain coefficient, high electron mobility, and low band gap: all excellent properties for optoelectronic applications. Until recently, these technological advantages were …