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Demonstration Of High-Temperature Operation Of Beta-Gallium Oxide (Β-Ga2o3) Metal-Oxide-Semiconductor Field Effect Transistors (Mosfet) With Electrostatic Model In Comsol, Nicholas Paul Sepelak

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β-Ga2O3 is a robust semiconductor material set with a large band gap of ~4.8 eV, low intrinsic carrier concentration, and high melting point that offers a stable platform for operating electronic devices at high temperatures and extreme environments. The first half of this thesis will cover the fabrication of a fixture and packaging to test electronic components at high temperatures. Then it will highlight the characterization of β-Ga2O3 field effect transistors from room temperature (RT) up to 500 °C. The devices, fabricated with Ni/Au and Al2O3 gate metal-oxide-semiconductor (MOS), demonstrate stable operation up to 500 oC. The tested device shows …