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Vibrational Lifetimes Of Hydrogen And Oxygen Defects In Semiconductors, Baozhou Sun

Dissertations, Theses, and Masters Projects

Characterization of defect and impurity reactions, dissociation, and migration in semiconductors requires a detailed understanding of the rates and pathways of vibrational energy flow and of the coupling mechanisms between local modes and the phonon bath of the host material. Information on the inelastic microscopic interaction can be obtained by measuring the lifetime of local vibrational modes. This dissertation presents lifetime measurements of hydrogen and oxygen defects in semiconductors by means of time-resolved infrared pump-probe spectroscopy.;First, we measured the vibrational lifetime of H- and D-related bending modes in Si and other semiconductors. Time-resolved pump-probe and linewidth measurements reveal that the …