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Full-Text Articles in Engineering
Synthesis And Characterization Of Silicon Dioxide Films Using Diethyl Silane And Oxygen, Kiran Kumar
Synthesis And Characterization Of Silicon Dioxide Films Using Diethyl Silane And Oxygen, Kiran Kumar
Theses
This study focuses on producing thin and thick silicon dioxide films towards the fabrication of integrated optical sensor capable of monitoring and determining in-situ, the concentration of numerous analyze species simultaneously. In this study, diethylsilane (DES) has been used as a precursor to produce silicon dioxide films by low pressure chemical vapor deposition. The films were synthesized with two different flow ratios of oxygen to DES in the temperature range of 550°C to 800°C at a constant pressure of 200mTorr. The films deposited with lower oxygen to DES flow ratio have very high growth rate but suffer from high tensile …
Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Tridimethylaminosilane, Xin Lin
Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Tridimethylaminosilane, Xin Lin
Theses
In this study amorphous stoichiometric silicon nitride films were synthesized by low pressure chemical vapor deposition (LPCVD) using tri(dimethylamino) silane (TDMAS) and ammonia (NH3). The growth kinetics were determined as a function of temperature in the range of 650 - 900 °C, total pressure in the range of 0.15 - 0.60 Torr, and NH3/TDMAS flow ratio in the range of 0 - 10. At constant condition of pressure (0.5 Torr), TDMSA flow rate (10 sccm) and NH3 flow rate (100 sccm), the deposition rate of as-deposited silicon nitride films was found to follow an Arrehnius …
Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Ditertiarybutylsilane, Xiangqun Fan
Low Pressure Chemical Vapor Deposition Of Silicon Nitride Films From Ditertiarybutylsilane, Xiangqun Fan
Theses
In this study amorphous stoichiometric silicon nitride films were synthesized by low pressure chemical vapor deposition (LPCVD) using DTBS (ditertiarybutylsilane) and ammonia (NH3). The growth kinetics were determined as a function of temperature in the range of 600-900 00, pressure in the range of 0.2-1.1 Torr, DTBS flow rate in the range of 10-50 sccm, and NH3/DTBS flow ratio in the range of 5-20. At constant condition of pressure (0.5 Torr), DTBS flow rate (10sccm) and NH3 flow rate (100 sccm), the deposition rate of as-deposited silicon nitride films was found to follow an Arrehnius …