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Full-Text Articles in Engineering
Radiation Effects On An Active Ytterbium-Doped Fiber Laser, Adam C. Poulin
Radiation Effects On An Active Ytterbium-Doped Fiber Laser, Adam C. Poulin
Theses and Dissertations
This is the first published research focused on the impact of gamma and mixed gamma/neutron radiation on an actively lasing ytterbium-doped fiber laser. While the gain medium of the ytterbium-doped fiber laser was irradiated, the power was measured in-situ and the spectrum was recorded intermittently. Two radiation sources were used, a 60Co cell and a reactor. Three irradiation experiments were conducted per radiation source; pristine fibers were used for the first two experiments, and fibers from the second experiment were re-irradiated for the third experiment. The results indicate that as the total dose increased linearly with time, the laser …
Neutron Radiation Effects On Ge And Gesn Semiconductors, Christopher T. O'Daniel
Neutron Radiation Effects On Ge And Gesn Semiconductors, Christopher T. O'Daniel
Theses and Dissertations
Two different semiconductor materials received neutron radiation for assessment of radiation damage. The two materials are undoped bulk Ge and epitaxial Ge0.991Sn0.009, which is doped heavily with phosphorous. At room temperature, the Ge sample has direct and indirect bandgaps at 0.78 eV and 0.66 eV, respectively. The Ge0.991Sn0.009 sample has direct and indirect bandgaps at 0.72 eV and 0.63 eV, respectively. Two samples of each material were exposed to research reactor neutrons, delivering a 1 MeV equivalent neutron fluence of 2.52 × 1015 n/cm2. In order to assess the radiation …
Radiation Effects In Thin Film Hexagonal Boron Nitride, Nathaniel M. Kaminski
Radiation Effects In Thin Film Hexagonal Boron Nitride, Nathaniel M. Kaminski
Theses and Dissertations
The radiation response of 2 nm and 12 nm hexagonal boron nitride (hBN) thin film insulators was studied using metal insulator semiconductor (MIS) devices. Current-voltage, capacitance-voltage, and impedance spectroscopy measurements were compared to quantify changes in hBN resistance due to radiation damage. MIS devices exposed to a gamma total dose deposition of 3.1 Mrad(Si) from a Co- 60 source exhibited a small increase in hBN resistance and no observable C-V shift associated with charge trapping. MIS devices irradiated with 4.5 MeV silicon ions showed no significant resistivity decrease to a threshold fluence of 1 ×1012 for the 2 nm …