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Mechanistic Investigation Of Antimony Carboxylate Photoresists For Euv Lithography, Michael Murphy
Mechanistic Investigation Of Antimony Carboxylate Photoresists For Euv Lithography, Michael Murphy
Legacy Theses & Dissertations (2009 - 2024)
In 2019, Extreme Ultraviolet (EUV) lithography begins its integration into high volume manufacturing to replace 193-nm lithography at key steps in the fabrication of integrated circuits. To achieve the requirements of the 7- and 5-nm nodes, a new photoresist technology is required to replace traditional chemically-amplified photoresists (CAR). One novel technology incorporates metal atoms with high EUV absorptivity into the photoresist. In this work, we describe the development, evaluation and mechanistic investigation of triorganoantimony(V) dicarboxylate complexes as novel photoresists for EUV lithography.
Organometallic Carboxylate Resists For Euv With High Sensitivity, James Passarelli
Organometallic Carboxylate Resists For Euv With High Sensitivity, James Passarelli
Nanoscale Science & Engineering (discontinued with class year 2014)
We have developed organometallic carboxylate compounds [RnM(O2CR’)2] capable of acting as negative-tone EUV resists. Overall, the best and fastest resists contain antimony, are pentavalent and the carboxylate group contains a polymerizable olefin (e.g. acrylate, methacrylate or styrenecarboxylate). Evidence suggests that high sensitivity is achieved through the polymerization of olefins in the exposed region. We have performed a systematic sensitivity study of molecules of the type RnM(O2CR’)2 where we have studied seven R groups, four main group metals (M), and three polymerizable carboxylate groups (O2CR’). We found that the greatest predictor of sensitivity of the RnSb(O2CR’)2 resists is their level of …