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Control Over Variability In Nonvolatile Hafnium-Oxide Resistive-Switching Memory Based On Modeling Of The Switching Processes, Brian Jerad Butcher
Control Over Variability In Nonvolatile Hafnium-Oxide Resistive-Switching Memory Based On Modeling Of The Switching Processes, Brian Jerad Butcher
Legacy Theses & Dissertations (2009 - 2024)
Resistive random access memory (ReRAM) technology presents an attractive option for embedded non-volatile (NV) memory systems if its variability (cycle-to-cycle and device-to-device) can be controlled. This dissertation has focused on investigations to identify key mechanisms and parameters which dominate ReRAM variability, and the development of subsequent experimental and simulation-based tools to address this variability. The first component of these efforts entailed identification of the modern-day non-volatile memory technological gaps that have driven the operational requirements and challenges for resistive memory as an emerging NV memory.
Impacts Of Ion Irradiation On Hfo2-Based Resistive Random Access Memory Devices, Xiaoli He
Impacts Of Ion Irradiation On Hfo2-Based Resistive Random Access Memory Devices, Xiaoli He
Legacy Theses & Dissertations (2009 - 2024)
The impacts of ion irradiation on so-called vacancy-change mechanism (VCM) and electrochemical-metallization mechanism (ECM) ReRAM devices based on HfO2 are investigated using various ion sources: H+ (1 MeV), He+ (1 MeV), N+ (1MeV), Ne+ (1.6 MeV) and Ar+ (2.75 MeV) over a range of total doses (105 - 1011 rad(Si)) and fluences (1012 - 1015 cm-2). VCM-ReRAM devices show robust resistive switching function after all irradiation experiments. VCM resistive switching parameters including set voltage (Vset), reset voltage (Vreset), on-state resistance (Ron) and off-state resistance (Roff) exhibited, in most cases, modest changes …