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Influence Of Processing Techniques On Copper Deep Levels Formation And On Photoconductivity In Silicon Doped Gallium Arsenide, Lucy M. Thomas

Electrical & Computer Engineering Theses & Dissertations

Diffusion of copper in silicon doped gallium arsenide under different diffusion conditions is studied. Copper compensated silicon doped gallium arsenide (GaAs:Si:Cu) is used as switch material for bulk optically controlled semiconductor switch, and on-state photoconductivity of the switch is primarily due to the properties of the copper deep levels introduced in the material during diffusion. Gallium arsenide being a compound semiconductor, presence of vacancies and defects make the study of diffusion a complex process. The objective of the current research is twofold: a) to study the influence of diffusion conditions and processing techniques on copper deep level formation in silicon …