Engineering Commons^™

Optimizing The Plasmonic Enhancement Of Light In Metallic Nanogap Structures For Surface-Enhanced Raman Spectroscopy, Stephen Joseph Bauman

Graduate Theses and Dissertations

Technology based on the interaction between light and matter has entered something of a renaissance over the past few decades due to improved control over the creation of nanoscale patterns. Tunable nanofabrication has benefitted optical sensing, by which light is used to detect the presence or quantity of various substances. Through methods such as Raman spectroscopy, the optical spectra of solid, liquid, or gaseous samples act as fingerprints which help identify a single type of molecule amongst a background of potentially many other chemicals. This technique therefore offers great benefit to applications such as biomedical sensors, airport security, industrial waste …

Growth And Behaviors Of Inn/Gan Multiple Quantum Wells By Plasma-Assisted Molecular Beam Epitaxy, Chen Li

Graduate Theses and Dissertations

Fully realizing the potential of InGaN semiconductors requires high quality materials with arbitrary In-content. To this date the growth of In-rich InGaN films is still challenging since it suffers from the low growth temperatures and many detrimental alloying problems. InN/GaN multiple quantum wells (MQWs) and super lattices (SLs) are expected to be promising alternatives to random InGaN alloys since in principle they can achieve the equivalent band gap of InGaN random alloys with arbitrarily high In-content and at the same time bypass many growth difficulties.

This dissertation focuses on studying the growth mechanisms, structural properties and energy structures of InN/GaN …

Growth And Characterization Of Silicon-Germanium-Tin Semiconductors For Future Nanophotonics Devices, Bader Saad Alharthi

Graduate Theses and Dissertations

The bright future of silicon (Si) photonics has attracted research interest worldwide. The ultimate goal of this growing field is to develop a group IV based Si foundries that integrate Si-photonics with the current complementary metal–oxide–semiconductor (CMOS) on a single chip for mid-infrared optoelectronics and high speed devices. Even though group IV was used in light detection, such as photoconductors, it is still cannot compete with III-V semiconductors for light generation. This is because most of the group IV elements, such as Si and germanium (Ge), are indirect bandgap materials. Nevertheless, Ge and Si attracted industry attention because they are …

Opto-Thermal Characterization Of Plasmon And Coupled Lattice Resonances In 2-D Metamaterial Arrays, Vinith Bejugam

Graduate Theses and Dissertations

Growing population and climate change inevitably requires longstanding dependency on sustainable sources of energy that are conducive to ecological balance, economies of scale and reduction of waste heat. Plasmonic-photonic systems are at the forefront of offering a promising path towards efficient light harvesting for enhanced optoelectronics, sensing, and chemical separations. Two-dimensional (2-D) metamaterial arrays of plasmonic nanoparticles arranged in polymer lattices developed herein support thermoplasmonic heating at off-resonances (near infrared, NIR) in addition to regular plasmonic resonances (visible), which extends their applicability compared to random dispersions. Especially, thermal responses of 2-D arrays at coupled lattice resonance (CLR) wavelengths were comparable …

High-Sn-Content Gesn Alloy Towards Room-Temperature Mid Infrared Laser, Wei Dou

Graduate Theses and Dissertations

Si photonics is a rapidly expanding technology that integrates photonic circuits onto a Si substrate. The integration of Si electronics and photonics has been a successful technology for a wide range of applications. Group-IV alloy GeSn has drawn great attentions as a complementary metal–oxide–semiconductor compatible optoelectronic material for Si photonics. The devices based on GeSn alloy could be monolithically integrated into well-established and high-yield Si integrated circuits, which is favorable for chip-scale Si photonics featuring smaller size, lower cost, and higher reliability.

The relaxed GeSn with high material quality and high Sn composition is highly desirable to cover mid-infrared wavelength. …