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Closed Form Implicitly Integrated Models For Computationally Efficient Simulation Of Power Electronics, Andrew Wunderlich
Closed Form Implicitly Integrated Models For Computationally Efficient Simulation Of Power Electronics, Andrew Wunderlich
Theses and Dissertations
This work describes novel closed-form, implicitly integrated (CF-implicit) models of switched-mode power converters which feature implicit integration but require no iterative numerical solving algorithm for evaluation because they are explicitly solved prior to model execution. The derived models capture the large-signal dynamic behavior of the power converters, so their use and accuracy are not limited to any one set of operating conditions. These models can be implemented in any computational environment, including directly on an existing embedded controller as a digital twin. Since no iterative solver is required, the models are highly computationally efficient and have a very predictable worst-case …
Modeling And Loss Analysis Of Wide Bandgap Power Semiconductor Devices, Kang Peng
Modeling And Loss Analysis Of Wide Bandgap Power Semiconductor Devices, Kang Peng
Theses and Dissertations
In recent times, the development of high power density and high efficiency power converters has become critical in power electronics applications like electric vehicles, aircrafts, electric ships and so on. High-switching-frequency and high-temperature operation are required to achieve this target. However, these requirements are exceeding the theoretical material-related limits of silicon (Si) based devices. The emerging wide bandgap power semiconductor technology is a promising solution to meet these requirements. Silicon Carbide (SiC) and Gallium Nitride (GaN) are the most promising among all wide bandgap semiconductor materials. SiC and GaN have almost a three times larger bandgap (about 3eV), compared with …
Modeling Of Sic Power Semiconductor Devices For Switching Converter Applications, Ruiyun Fu
Modeling Of Sic Power Semiconductor Devices For Switching Converter Applications, Ruiyun Fu
Theses and Dissertations
Thanks to recent progress in SiC technology, SiC JFETs, MOSFETs and Schottky diodes are now commercially available from several manufactories such as Cree, GeneSiC and Infineon. SiC devices hold the promise of faster switching speed compared to Si devices, which can lead to superior converter performance, because the converter can operate at higher switching frequencies with acceptable switching losses, so that passive filter size is reduced. However, the ultimate achievable switching speed is determined not only by internal semiconductor device physics, but also by circuit parasitic elements. Therefore, in order to accurately predict switching losses and actual switching waveforms, including …
Channel Probing For An Indoor Wireless Communications Channel, Brandon Hunter
Channel Probing For An Indoor Wireless Communications Channel, Brandon Hunter
Theses and Dissertations
The statistics of the amplitude, time and angle of arrival of multipaths in an indoor environment are all necessary components of multipath models used to simulate the performance of spatial diversity in receive antenna configurations. The model presented by Saleh and Valenzuela, was added to by Spencer et. al., and included all three of these parameters for a 7 GHz channel. A system was built to measure these multipath parameters at 2.4 GHz for multiple locations in an indoor environment. Another system was built to measure the angle of transmission for a 6 GHz channel. The addition of this parameter …