Engineering Commons^™

Modeling Of Two Dimensional Graphene And Non-Graphene Material Based Tunnel Field Effect Transistors For Integrated Circuit Design, Md Shamiul Fahad

LSU Doctoral Dissertations

The Moore’s law of scaling of metal oxide semiconductor field effect transistor (MOSFET) had been a driving force toward the unprecedented advancement in development of integrated circuit over the last five decades. As the technology scales down to 7 nm node and below following the Moore’s law, conventional MOSFETs are becoming more vulnerable to extremely high off-state leakage current exhibiting a tremendous amount of standby power dissipation. Moreover, the fundamental physical limit of MOSFET of 60 mV/decade subthreshold slope exacerbates the situation further requiring current transport mechanism other than drift and diffusion for the operation of transistors. One way to …