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Full-Text Articles in Engineering
Linear Quadratic Optimal Control For A Cascaded Converters-Based Microgrid, Amlam Niragire
Linear Quadratic Optimal Control For A Cascaded Converters-Based Microgrid, Amlam Niragire
Graduate Theses and Dissertations
There is a constant transformation of the electric grid due to an ongoing interest in the deployment of renewable energy resources and electric microgrid formation. This transformation, though advantageous in many ways, poses great challenges for the energy industry and there must be a constant improvement in modeling, simulation, analysis and control techniques in order to characterize and optimize the system design and operation. In this light, the scope of this thesis is focused on developing a linear model, analyzing the stability and designing an optimal linear quadratic regulator (LQR) for a microgrid system. The microgrid system used is inspired …
Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks
Modeling And Simulation Of 1700 V 8 A Genesic Superjunction Transistor, Staci E. Brooks
Graduate Theses and Dissertations
The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.
Modeling Of Sic P-Channel Insulated Gate Bipolar Transistors (Igbts), Mahmood Saadeh
Modeling Of Sic P-Channel Insulated Gate Bipolar Transistors (Igbts), Mahmood Saadeh
Graduate Theses and Dissertations
A new physics-based IGBT compact model has been developed for circuit simulation of silicon (Si) or silicon carbide (SiC) devices. The model accurately predicts the steady-state output, transfer and switching characteristics of the IGBT under a variety of different conditions. This is the first IGBT model to predict the behavior of p-channel SiC IGBTs. Previous work on IGBT models has focused on Si n-channel IGBTs [1-3]. This unified model is not limited to SiC p-channel IGBTs; the user has the option to select between Si or SiC, and n-channel or p-channel, making it the first IGBT model that captures the …