Engineering Commons^™

Modeling Of Quad-Station Module Cluster Tools Using Petri Nets, Aung Nay

Theses

The semiconductor industry is highly competitive, and with the recent chip shortage, the throughput of wafers has become more important than ever. One of the tools that the industry has deployed is to use of quad-station modules instead of the traditional single-station modules that allow for higher throughput and better wafer consistency by processing multiple wafers at the same time and distributing work. The industry trend is to use multiple transfer chamber robots to stack the quad-station modules in a series, particularly for etch products. In this work, the quad-station cluster tool wafer movement is modeled by using Petri net …

Selective Neural Stimulation By Leveraging Electrophysiological Diversity And Using Alternative Stimulus Waveforms, Bemin Ghobreal

Dissertations

Efforts on finding the principle mechanism for selective neural stimulation have concentrated on segregating the neurons based on their size and other geometric factors. However, neuronal subtypes found in different parts of the nervous system also differ in their electrophysiological properties. The primary objective of this study is to investigate the feasibility of selective activation of neurons by leveraging the diversity seen in passive and active membrane properties.

Using both a local membrane model and an axon model based on the CRRSS, the diversity of electrophysiological properties is simulated by varying four model parameters (membrane leakage-Gleak and capacitance-Cm, temperature coefficient-Ktemp, …

Influence Of Defects And Impurities On Solar Cell Performance, Vinay Budhraja

Dissertations

Multicrystalline silicon (mc-Si) solar cells exhibit high impurity content and higher density of crystal defects such as grain boundaries, dislocations, stacking faults and impurity precipitates. Even though the effect of dislocations on mc-Si solar cell performance has been studied, a severe lack of understanding of the quantitative effects of dislocations on cell parameters still exists. Some correlation has been reported under the assumption of a uniform distribution of dislocation density and a negligible effect of front and back surface recombination velocity. This assumption can cause a significant error as the current mc-Si technology provides good surface passivation by SiN:H and …