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Full-Text Articles in Engineering
Modeling Of Two Dimensional Graphene And Non-Graphene Material Based Tunnel Field Effect Transistors For Integrated Circuit Design, Md Shamiul Fahad
Modeling Of Two Dimensional Graphene And Non-Graphene Material Based Tunnel Field Effect Transistors For Integrated Circuit Design, Md Shamiul Fahad
LSU Doctoral Dissertations
The Moore’s law of scaling of metal oxide semiconductor field effect transistor (MOSFET) had been a driving force toward the unprecedented advancement in development of integrated circuit over the last five decades. As the technology scales down to 7 nm node and below following the Moore’s law, conventional MOSFETs are becoming more vulnerable to extremely high off-state leakage current exhibiting a tremendous amount of standby power dissipation. Moreover, the fundamental physical limit of MOSFET of 60 mV/decade subthreshold slope exacerbates the situation further requiring current transport mechanism other than drift and diffusion for the operation of transistors. One way to …
Quantitative Estimation Of Causality And Predictive Modeling For Precipitation Observation Sites And River Gage Sensors, Tri Vu Nguyen
Quantitative Estimation Of Causality And Predictive Modeling For Precipitation Observation Sites And River Gage Sensors, Tri Vu Nguyen
LSU Master's Theses
This project seeks to investigate two questions: correlations from precipitation measurement sensors to river gage sensors, and predictive modeling of peak river gage heights during precipitation events. First, if correlations can be quantified, then a predictive model can be explored to predict peak water levels at river gage sensors, in response to precipitation inputs. Answering both research questions can provide early flood detection benefits and provide quantitative time assessments for flood risks. An extensive data-driven study was conducted across a geographical area of the U.S, spanning the time period 2008-2016 to identify river gage sensors that are closely correlated to …