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Full-Text Articles in Engineering
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Faculty Publications
No abstract provided.
Crystal Growth, Characterization And Anisotropic Electrical Properties Of Gase Single Crystals For Thz Source And Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, R. D. Rauh
Crystal Growth, Characterization And Anisotropic Electrical Properties Of Gase Single Crystals For Thz Source And Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, R. D. Rauh
Faculty Publications
The single crystal growth of large semi‐insulating GaSe by the vertical Bridgman technique using zone‐refined selenium (Se) and HP gallium (Ga) is described. The grown crystals (up to 10 cm long and 2.5 cm diameter) have been characterized thoroughly by X‐ray diffraction (XRD), energy dispersive analysis by x‐rays (EDAX), optical absorption/transmission, X‐ray photoelectron spectroscopy (XPS), charge carrier electrical property measurements, second harmonic test, and radiation detection measurements.