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Series

2005

University of South Carolina

Crystal growth

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne Apr 2005

Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne

Faculty Publications

No abstract provided.


Crystal Growth, Characterization And Anisotropic Electrical Properties Of Gase Single Crystals For Thz Source And Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, R. D. Rauh Jan 2005

Crystal Growth, Characterization And Anisotropic Electrical Properties Of Gase Single Crystals For Thz Source And Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, R. D. Rauh

Faculty Publications

The single crystal growth of large semi‐insulating GaSe by the vertical Bridgman technique using zone‐refined selenium (Se) and HP gallium (Ga) is described. The grown crystals (up to 10 cm long and 2.5 cm diameter) have been characterized thoroughly by X‐ray diffraction (XRD), energy dispersive analysis by x‐rays (EDAX), optical absorption/transmission, X‐ray photoelectron spectroscopy (XPS), charge carrier electrical property measurements, second harmonic test, and radiation detection measurements.