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Evidence For Band-Gap Narrowing Effects In Be-Doped, P-P+ Gaas Homojunction Barriers, H. L. Chuang, Paul David Demoulin, M. E. Klausmeier-Brown, Michael R. Melloch, Mark S. Lundstrom
Evidence For Band-Gap Narrowing Effects In Be-Doped, P-P+ Gaas Homojunction Barriers, H. L. Chuang, Paul David Demoulin, M. E. Klausmeier-Brown, Michael R. Melloch, Mark S. Lundstrom
Department of Electrical and Computer Engineering Faculty Publications
The electrical performance of Be‐doped, p‐p+ GaAs homojunction barriers is characterized and analyzed. The results of the analysis show that minority‐carrier electrons, at 300 K, have a mobility of 4760 cm2/V s at a hole concentration of 2.3×1016 cm−3, and that the effective recombination velocity for these homojunction barriers is about 6×104 cm/s. We present evidence that this unexpectedly high recombination velocity is a consequence of an effective reduction in band gap due to the heavy impurity doping. The effective band‐gap shrinkage in this Be‐doped material grown by molecular‐beam epitaxy appears to be comparable to that already …
Effects Of Heavy Impurity Doping On Electron Injection In P+-N Gaas Diodes, M. E. Klausmeier-Brown, Mark S. Lundstrom, Michael R. Melloch, S. P. Tobin
Effects Of Heavy Impurity Doping On Electron Injection In P+-N Gaas Diodes, M. E. Klausmeier-Brown, Mark S. Lundstrom, Michael R. Melloch, S. P. Tobin
Department of Electrical and Computer Engineering Faculty Publications
Measurements of electron injection currents in p+‐n diodes are presented for a range of p‐type dopant concentrations. A successive etch technique was used to characterize the electron injection current in terms of the product (noDn). Measurements are presented for Zn‐doped GaAs solar cells with p‐layer hole concentrations in the range 6.3×1017−1.3×1019 cm−3. The results demonstrate that so‐called band‐gap narrowing effects substantially increase the injected electron current in heavily doped p‐type GaAs. These heavy doping effects must be accounted for in the modeling and design of GaAs solar cells and heterostructure …