Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Engineering
Sonochemical Synthesis Of Zinc Oxide Nanostructures For Sensing And Energy Harvesting, Phani Kiran Vabbina
Sonochemical Synthesis Of Zinc Oxide Nanostructures For Sensing And Energy Harvesting, Phani Kiran Vabbina
FIU Electronic Theses and Dissertations
Semiconductor nanostructures have attracted considerable research interest due to their unique physical and chemical properties at nanoscale which open new frontiers for applications in electronics and sensing. Zinc oxide nanostructures with a wide range of applications, especially in optoelectronic devices and bio sensing, have been the focus of research over the past few decades. However ZnO nanostructures have failed to penetrate the market as they were expected to, a few years ago. The two main reasons widely recognized as bottleneck for ZnO nanostructures are (1) Synthesis technique which is fast, economical, and environmentally benign which would allow the growth on …
Ellipsometric Characterization Of Silicon And Carbon Junctions For Advanced Electronics, Alexander G. Boosalis
Ellipsometric Characterization Of Silicon And Carbon Junctions For Advanced Electronics, Alexander G. Boosalis
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
Ellipsometry has long been a valuable technique for the optical characterization of layered systems and thin films. While simple systems like epitaxial silicon dioxide are easily characterized, complex systems of silicon and carbon junctions have proven difficult to analyze. Traditional model dielectric functions for layered silicon homojunctions, a system with a similar structure to modern transistors, often have correlated parameters during ellipsometric data analysis. Similarly, epitaxial graphene as grown from thermal sublimation of silicon from silicon carbide or through chemical vapor deposition, tend to have model dielectric function parameters that correlate with the optical thickness of the graphene due to …