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Full-Text Articles in Engineering
Tailoring Zno Nanostructures By Spray Pyrolysis And Thermal Annealing
Tailoring Zno Nanostructures By Spray Pyrolysis And Thermal Annealing
Faculty of Engineering University of Malaya
We report a novel synthesis of ZnO nanorods with hexagonal pyramid-like heads by a simple and low cost technique of spray pyrolysis with the help of zinc acetate and tin (IV) chloride pentahydrate precursors. In the present study, the growth of ZnO nanorods is optimized by varying a number of sprays and annealing temperatures in the synthesis process. FESEM analysis reveals that ZnO nanorods are observed when the number of sprays exceeds 150 and film-like structure is observed below 150 sprays. Nanorods are formed when the molar ratio of zinc acetate to tin (IV) chloride pentahydrate in the solution mixture …
Surface States In Template Synthesized Tin Oxide Nanoparticles, A. Cabot, J. Arbiol, R. Ferre, J. R. Morante, Fanglin Chen, Meilin Liu
Surface States In Template Synthesized Tin Oxide Nanoparticles, A. Cabot, J. Arbiol, R. Ferre, J. R. Morante, Fanglin Chen, Meilin Liu
Fanglin Chen
Tin–oxide nanoparticles with controlled narrow size distributions are synthesized while physically encapsulated inside silica mesoporous templates. By means of ultraviolet-visible spectroscopy, a redshift of the optical absorbance edge is observed. Photoluminescence measurements corroborate the existence of an optical transition at 3.2 eV. The associated band of states in the semiconductor gap is present even on template-synthesized nanopowders calcined at 800 °C, which contrasts with the evolution of the gap states measured on materials obtained by other methods. The gap states are thus considered to be surface localized, disappearing with surface faceting or being hidden by the surface-to-bulk ratio decrease.
Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Grigory Simin
We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence,photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices.
Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska
Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska
Grigory Simin
We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well(MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures.