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Full-Text Articles in Engineering
Solution-Processed Near-Infrared Polymer Photodetectors With An Inverted Device Structure, Xilan Liu, Hangxing Wang, Tingbin Yang, Wei Zhang, I-Fan Hsieh, Stephen Cheng, Xiong Gong
Solution-Processed Near-Infrared Polymer Photodetectors With An Inverted Device Structure, Xilan Liu, Hangxing Wang, Tingbin Yang, Wei Zhang, I-Fan Hsieh, Stephen Cheng, Xiong Gong
Xiong Gong
Solution-processed near-infrared polymer photodetectors with an inverted device structure were designed and fabricated. By introducing ZnOx and MoO3 as an electron extraction layer and a hole extraction layer, respectively, the asymmetric characteristics of the inverted polymer photodetectors was constructed. Operating at room temperature, the inverted polymer photodetectors exhibited the detectivity over 1012 cm Hz1/2/W from 400 to 850 nm, resulting from the enhanced photocurrent and reduced dark current induced by fabricating photoactive layer from solution with processing additive 1,8-diiodooctane. These device performances were comparable to those of inorganic counterparts.
Towards High Performance Inverted Polymer Solar Cells, Xiong Gong
Towards High Performance Inverted Polymer Solar Cells, Xiong Gong
Xiong Gong
Bulk heterojunction (BHJ) polymer solar cells (PSCs) that can be fabricated by solution processing techniques are under intense investigation in both academic institutions and industrial companies because of their potential to enable mass production of flexible and cost-effective alternative to silicon-based solar cells. A combination of novel polymer development, nanoscale morphology control and processing optimization has led to over 8% of power conversion efficiencies (PCEs) for BHJ PSCs with a conventional device structure. Attempts to develop PSCs with an inverted device structure as required for achieving high PCEs and good stability have, however, met with limited success. Here, we report …
Polymer Solar Cells With An Inverted Device Configuration Using Polyhedral Oligomeric Silsesquioxane-[60] Fullerene Dyad As A Novel Electron Acceptor, Wen-Bin Zhang, Yingfeng Tu, Hao-Jan Sun, Kan Yue, Xiong Gong, Stephen Cheng
Polymer Solar Cells With An Inverted Device Configuration Using Polyhedral Oligomeric Silsesquioxane-[60] Fullerene Dyad As A Novel Electron Acceptor, Wen-Bin Zhang, Yingfeng Tu, Hao-Jan Sun, Kan Yue, Xiong Gong, Stephen Cheng
Xiong Gong
A polyhedral oligomeric silsesquioxane-[60]fullerene (POSS-C60) dyad was designed and used as a novel electron acceptor for bulk heterojunction (BHJ) polymer solar cells (PSCs) with an inverted device configuration. The studies of time-resolved photoinduced absorption of the pristine thin film of poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)-2,6-diyl-alt-(4,7-bis (2-thienyl)-2,1,3-benzothiadiazole)-5,5′-diyl] (SiPCPDTBT) and the composite thin film of SiPCPDTBT:POSS-C60 indicated efficient electron transfer from SiPCPDTBT to POSS-C60 with inhibited back-transfer. BHJ PSCs made by SiPCPDTBT mixed with POSS-C60 yielded the power conversion efficiencies (PCEs) of 1.50%. Under the same operational conditions, PCEs observed from BHJ PSCs made by SiPCPDTBT mixed with [6,6]-phenyl-C61-butyric acid methyl ester were 0.92%. These results …
Inverted Structure Polymer Solar Cells With Solution Processed Zinc Oxide Thin Film As An Electron Collection Layer, Tingbin Yang, Donghuan Qin, Linfeng Lan, Wenbo Huang, Xiong Gong, Junbiao Peng, Yong Cao
Inverted Structure Polymer Solar Cells With Solution Processed Zinc Oxide Thin Film As An Electron Collection Layer, Tingbin Yang, Donghuan Qin, Linfeng Lan, Wenbo Huang, Xiong Gong, Junbiao Peng, Yong Cao
Xiong Gong
A solution-processed zinc oxide (ZnO) thin film as an electron collection layer for polymer solar cells (PSCs) with an inverted device structure was investigated. Power conversion efficiencies (PCEs) of PSCs made with a blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) are 3.50% and 1.21% for PSCs with and without the ZnO thin film, respectively. Light intensity dependence of the photocurrent and the capacitance-voltage measurement demonstrate that the increased PCEs are due to the restriction of the strong bimolecular recombination in the interface when a thin ZnO layer is inserted between the polymer active layer and the …