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Direct Electron-Beam Patterning Of Teflon-Af And Its Application To Optical Waveguiding, Vijayasree Karre
Direct Electron-Beam Patterning Of Teflon-Af And Its Application To Optical Waveguiding, Vijayasree Karre
University of Kentucky Master's Theses
Thin films of Teflon AF have been directly patterned by electron-beam lithography without the need for post exposure chemical development. The relationship between pattern depth and exposure dose was found to be linear over a wide range of doses. Pattern depth was also observed to be dependent on initial film thickness. Teflon AF can be directly patterned at doses similar to typical e-beam resists. High resolution features as small as ~200 nm have been resolved. FTIR measurements revealed that CF3 and fluorinated dioxole groups play a significant role in the patterning mechanism. Teflon AF films also exhibited an increase in …