Engineering Commons^™

Study Of The Effects Of Deuterium Implantation Upon The Performance Of Thin-Oxide Cmos Devices, Sumit Kishore

Theses

The use of ultra thin oxide films in modem semiconductor devices makes them increasingly susceptible to damage due to the hot carrier damage. Deuterium in place of hydrogen was introduced by ion implantation at the silicon oxide-silicon interface during fabrication to satisfy the dangling bonds. Deuterium was implanted at energies of 15, 25 and 35 keV and at a dose of 1x10¹⁴/cm². Some of the wafers were subjected to N₂O annealing following gate oxide growth. It was demonstrated that ion implantation is an effective means of introduction of deuterium. Deuterium implantation brings about a …

Low Pressure Chemical Vapor Deposition (Lpcvd) Of Titanium Nitride : Synthesis And Characterization, Sameer Narsinha Dharmadhikari

Theses

Titanium tetrachioride and ammonia were used as precursors in a Jow pressure chemical vapor deposition process to deposit titanium nitride films on silicon wafers. The process was carried out at temperatures from 450 to 850 C and the activation energy for the reaction was determined. The order of the reaction, with respect to the partial pressures of the reactant gases, was determined by carrying out the reaction at varying partial pressures of the reactant gases. The following rate equation was established for the reaction:

rate = 4.35*10^-5exp(-5150/T)*(P_NH3)^1.37(P_Ticl4)^-0.42

The titanium nitride thin …

Development And Characteristics Of Carbon Nitride Thin Solid Films For Advanced Coating Applications, Muhammad A. Hussain

Theses

Carbon nitride films were synthesized on silicon substrate by reactive magnetron sputtering of graphite target in an environment of Ar and nitrogen gas. The performance of a negative carbon ion source was also investigated to use the source in negative ion-beam-assisted deposition. These films were synthesized at room temperature at a constant pressure of 5 mtorr and at 300 Watts R.17 power, but at different composition of nitrogen in Ar-N₂ gas mixture ranging from 0-53 percent. The films deposited were microscopically smooth, amorphous and their properties found to be varied with nitrogen composition in plasma. The deposition rate was …