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Electrical Properties Of Srbi₂Ta₂O₉ Ferroelectric Thin Films At Low Temperature, Pingxiong Yang, David L. Carroll, John Ballato, Robert W. Schwartz
Electrical Properties Of Srbi₂Ta₂O₉ Ferroelectric Thin Films At Low Temperature, Pingxiong Yang, David L. Carroll, John Ballato, Robert W. Schwartz
Mechanical and Aerospace Engineering Faculty Research & Creative Works
The temperature dependence of electrical properties for SrBi2Ta2O9 thin film capacitors with platinum electrodes (Pt/SBT/Pt) on silicon wafers was studied from 10 to 300 K. with a decrease in temperature from 300 to 200 K, the remanent polarization of the thin films shows about an 11% reduction from its 300 K value; however, it is reduced by about 87% reduction from its 200 K value when the temperature drops from 200 to 100 K. with a decrease to 200 K, the polarization fatigue was significant, and the capacitor shows an approximate 29% reduction in polarization from its initial value following …
Optical Limiting In Srbi₂Ta₂O₉ And Pbzrxti₁₋ₓo₃ Thin Films, Pingxiong Yang, Jianfeng Xu, Robert W. Schwartz, David L. Carroll, John Ballato
Optical Limiting In Srbi₂Ta₂O₉ And Pbzrxti₁₋ₓo₃ Thin Films, Pingxiong Yang, Jianfeng Xu, Robert W. Schwartz, David L. Carroll, John Ballato
Mechanical and Aerospace Engineering Faculty Research & Creative Works
Optical limiting effects in SrBi2Ta2O9 (SBT) and PbZrxTi1-xO3 (PZT) ferroelectric thin films have been observed with nanosecond laser pulses at 1.064 µm. Limiting thresholds were found to be 5.84 J/cm2 for SBT and between 4.53 and 5.93 J/cm2 for PZT, depending on composition, whereas saturation thresholds for the films were about 2.92 J/cm2 and between 2.27 J/cm2 to 2.97 J/cm2, respectively. Damage thresholds around 10.0 J/cm2 and between 10.37 J/cm2 to 10.54 J/cm2, respectively for SBT and PZT, were also determined. A possible mechanism for the observed limiting, nonlinear optical scattering from the ferroelectric domains, is discussed. These results elucidate …