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Electrical Properties Of Srbi₂Ta₂O₉ Ferroelectric Thin Films At Low Temperature, Pingxiong Yang, David L. Carroll, John Ballato, Robert W. Schwartz

Mechanical and Aerospace Engineering Faculty Research & Creative Works

The temperature dependence of electrical properties for SrBi2Ta2O9 thin film capacitors with platinum electrodes (Pt/SBT/Pt) on silicon wafers was studied from 10 to 300 K. with a decrease in temperature from 300 to 200 K, the remanent polarization of the thin films shows about an 11% reduction from its 300 K value; however, it is reduced by about 87% reduction from its 200 K value when the temperature drops from 200 to 100 K. with a decrease to 200 K, the polarization fatigue was significant, and the capacitor shows an approximate 29% reduction in polarization from its initial value following …