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Inas(111)A Homoepitaxy With Molecular Beam Epitaxy, Kevin D. Vallejo, Trent A. Garrett, Kathryn E. Sautter, Kevin Saythavy, Baolai Liang, Paul J. Simmonds
Inas(111)A Homoepitaxy With Molecular Beam Epitaxy, Kevin D. Vallejo, Trent A. Garrett, Kathryn E. Sautter, Kevin Saythavy, Baolai Liang, Paul J. Simmonds
Materials Science and Engineering Faculty Publications and Presentations
The authors have established a robust set of growth conditions for homoepitaxy of high-quality InAs with a (111)A crystallographic orientation by molecular beam epitaxy (MBE). By tuning the substrate temperature, the authors obtain a transition from a 2D island growth mode to step-flow growth. Optimized MBE parameters (substrate temperature = 500 °C, growth rate = 0.12ML/s, and V/III ratio ≥ 40) lead to the growth of extremely smooth InAs(111)A films, free from hillocks and other 3D surface imperfections. The authors see a correlation between InAs surface smoothness and optical quality, as measured by photoluminescence spectroscopy. This work establishes InAs(111)A as …