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Articles 1 - 30 of 30
Full-Text Articles in Engineering
Design And Analysis Of A Discrete, Pcb-Level Low-Power, Microwave Cross-Coupled Differential Lc Voltage-Controlled Oscillator, Pavin Singh Virdee
Design And Analysis Of A Discrete, Pcb-Level Low-Power, Microwave Cross-Coupled Differential Lc Voltage-Controlled Oscillator, Pavin Singh Virdee
Master's Theses
Radio Frequency (RF) and Microwave devices are typically implemented in Integrated Circuit (IC) form to minimize parasitics, increase precision and tolerances, and minimize size. Although IC fabrication for students and independent engineers is cost-prohibitive, an abundance of low-cost, easily accessible printed circuit board (PCB) and electronic component manufacturers allows affordable PCB fabrication.
While nearly all microwave voltage-controlled oscillator (VCO) designs are IC-based, this study presents a discrete PCB-level cross-coupled, differential LC VCO to demonstrate this more affordable and accessible approach. This thesis presents a 65 mW, discrete component VCO PCB with industry-comparable RF performance. A phase noise of -103.7 dBc/Hz …
Design And Analysis Of N-Path Filter For Radio Frequencies, Nathan M. Bergen
Design And Analysis Of N-Path Filter For Radio Frequencies, Nathan M. Bergen
Master's Theses
Due to the growth of wireless communication many communication frequencies have grown increasingly dense. This density requires higher Q-factor to receive only the signal of interest. With the rise of smaller integrated circuits previous solutions used for filtering have become viable again. This paper explores whether the N-path filter is viable in the modern day for radio frequency receiver purposes. A non-differential N-path filter was created by utilizing Cadence Virtuoso with a working center frequency range of 750MHz to 1GHz while using TSMC technology. The desired quality factor of over 1,000 was reached while maintaining a total area of 800 …
Model-Based Design Of An Optimal Lqg Regulator For A Piezoelectric Actuated Smart Structure Using A High-Precision Laser Interferometry Measurement System, Grant P. Gallagher
Model-Based Design Of An Optimal Lqg Regulator For A Piezoelectric Actuated Smart Structure Using A High-Precision Laser Interferometry Measurement System, Grant P. Gallagher
Master's Theses
Smart structure control systems commonly use piezoceramic sensors or accelerometers as vibration measurement devices. These measurement devices often produce noisy and/or low-precision signals, which makes it difficult to measure small-amplitude vibrations. Laser interferometry devices pose as an alternative high-precision position measurement method, capable of nanometer-scale resolution. The aim of this research is to utilize a model-based design approach to develop and implement a real-time Linear Quadratic Gaussian (LQG) regulator for a piezoelectric actuated smart structure using a high-precision laser interferometry measurement system to suppress the excitation of vibratory modes.
The analytical model of the smart structure is derived using the …
X-Band Rf Transmitter Design For Multi-Purpose Small Satellite Communication Operations, Omer F. Gumus
X-Band Rf Transmitter Design For Multi-Purpose Small Satellite Communication Operations, Omer F. Gumus
Master's Theses
This thesis provides a description of the analysis, design, and tests of an X-band RF Transmitter communication system for small satellites. X-band transmitter systems are becoming popular in the upcoming deep space missions. Most of the deep-space ground stations have been using X-band frequencies to receive or transmit signals. The X-band (<10 GHz) can offer lower atmospheric losses and up to a couple of Mbps data rates for multiple satellite operations. Nowadays, many small satellites have been using frequency bands such as VHF, UHF, L, and S-band frequencies for communication. From deep space to the ground station, the low-frequency ranges are inadequate in providing Mbps level data rates and enough bandwidth for deep space missions.
The main focus of this thesis was the development of the subsystems such as gain block amplifier, Mixer, Bandpass Filter, and RF power amplifier. The subsystems were designed separately, then they were connected together to perform an end-to-end system test. One of the thesis aims is to design …
10>Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Master's Theses
The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …
Design Of An Ultra-Wideband Frequency-Modulated Continuous Wave Short Range Radar System For Extending Independent Living, Toai-Chi Nguyen
Design Of An Ultra-Wideband Frequency-Modulated Continuous Wave Short Range Radar System For Extending Independent Living, Toai-Chi Nguyen
Master's Theses
Falls in the disabled and elderly people have been a cause of concern as they can be immobilized by the fall and have no way to contact others and seek assistance. The proposed frequency modulated continuous wave (FMCW) short range radar (SRR) system, which uses ultra-wideband (UWB) signals can provide immediate assistance by monitoring and detecting fall events. The unique characteristics of this system allow for a frequency-based modulation system to carry out triangulation and sense the location of the fall through the usage of a continuous chirp signal that linearly sweeps frequency. This project focuses on the development, design …
An Exploratory Study Of Pulse Width And Delta Sigma Modulators, Logan B. Penrod
An Exploratory Study Of Pulse Width And Delta Sigma Modulators, Logan B. Penrod
Master's Theses
This paper explores the noise shaping and noise producing qualities of Delta-Sigma Modulators (DSM) and Pulse-Width Modulators (PWM). DSM has long been dominant in the Delta Sigma Analog-to-Digital Converter (DSADC) as a noise-shaped quantizer and time discretizer, while PWM, with a similar self oscillating structure, has seen use in Class D Power Amplifiers, performing a similar function. It has been shown that the PWM in Class D Amplifiers outperforms the DSM [1], but could this advantage be used in DSADC use-cases? LTSpice simulation and printed circuit board implementation and test are used to present data on four variations of these …
Simulation Of An Sp8t 18 Ghz Rf Switch Using Smt Pin Diodes, Andre De Souza Vigano
Simulation Of An Sp8t 18 Ghz Rf Switch Using Smt Pin Diodes, Andre De Souza Vigano
Master's Theses
Radio frequency (RF) and microwave switches are widely used in several different applications including radar, measurement systems, telecommunications, and other areas. An RF switch can control a radar’s transmit vs. receive mode, select the operating band, or direct an RF signal to different paths. In this study, a single pole eight throw (SP8T) switch using only Surface Mount (SMT) components is designed and simulated in Keysight’s Advanced Design System (ADS). Single pole eight throw is defined as one input and eight possible outputs. A star network configuration with series-shunt PIN diode switches is used to create the 8-way RF switch. …
Experimental Study And Modeling Of The Gm-I Dependence Of Long-Channel Mosfets, Michael Fong Cheng
Experimental Study And Modeling Of The Gm-I Dependence Of Long-Channel Mosfets, Michael Fong Cheng
Master's Theses
This thesis describes an experimental study and modeling of the current-transconductance dependence of the ALD1106, ALD1107, and CD4007 arrays. The study tests the hypothesis that the I-gm dependence of these 7.8 µm to 10 µm MOSFETs conforms to the Advanced Compact Model (ACM). Results from performed measurements, however, do not support this expectation. Despite the relatively large length, both ALD1106 and ALD1107 show sufficiently pronounced ‘short-channel’ effects to render the ACM inadequate. As a byproduct of this effort, we confirmed the modified ACM equation. With an m factor of approximately 0.6, it captures the I-gm dependence with sub-28% maximum error …
Adaptation Of Vt-Dbr Lasers For Lidar, Luke Horowitz
Adaptation Of Vt-Dbr Lasers For Lidar, Luke Horowitz
Master's Theses
Vernier Tuned Distributed Bragg Reflector (VT-DBR) lasers have had great success in the field of Swept-Source Optical Coherence Tomography (SS-OCT) due to their continuous and nearly 40 nm wavelength tuning range in a single longitudinal mode. Fast sweeps allow for real time imaging with micrometer resolution at a distance of a few centimeters. While this laser has proven quite useful as a medical imaging tool via OCT, it has yet to similarly prove itself for general light detection and ranging (LIDAR) applications due to range limitations that arise from a finite laser coherence length. The goal of this thesis is …
Characterization Of Flexible Hybrid Electronics Using Stretchable Silver Ink And Ultra-Thin Silicon Die, Joshua A. Ledgerwood
Characterization Of Flexible Hybrid Electronics Using Stretchable Silver Ink And Ultra-Thin Silicon Die, Joshua A. Ledgerwood
Master's Theses
Flexible Hybrid Electronics (FHEs) offer many advantages to the future of wearable technology. By combining the dynamic performance of conductive inks, and the functionality of ultra-thinned, traditional IC technology, new FHE devices allow for development of applications previously excluded by relying on a specific type of electronics technology.
The characterization and reliability analysis of stretchable conductive inks paired with ultra-thin silicon die in theµm range was conducted. A silver based ink designed to be stretchable was screen printed on a TPU substrate and cured using box oven, conveyor convection oven, and photonic curing processes. Reliability tests were conducted including a …
Inquiry Of Graphene Electronic Fabrication, John Rausch Greene
Inquiry Of Graphene Electronic Fabrication, John Rausch Greene
Master's Theses
Graphene electronics represent a developing field where many material properties and devices characteristics are still unknown. Researching several possible fabrication processes creates a fabrication process using resources found at Cal Poly a local industry sponsor. The project attempts to produce a graphene network in the shape of a fractal Sierpinski carpet. The fractal geometry proves that PDMS microfluidic channels produce the fine feature dimensions desired during graphene oxide deposit. Thermal reduction then reduces the graphene oxide into a purified state of graphene. Issues arise during thermal reduction because of excessive oxygen content in the furnace. The excess oxygen results in …
Out-Of-Loop Compensation Method For Op-Amps Driving Heavy Capacitive Loads, Shubham Gandhi
Out-Of-Loop Compensation Method For Op-Amps Driving Heavy Capacitive Loads, Shubham Gandhi
Master's Theses
It is well known that real op-amps do not share most of the desirable characteristics of an ideal one, particularly those of gain and output impedance. When presented with a capacitive load, such as a MOSFET or ADC, feedback in an op-amp circuit can quickly become unstable. This thesis studies and characterizes an op-amp’s output impedance and how its interaction with this type of load creates a parasitic pole which leads to instability. Applying ideas from feedback control theory, a model for studying the problem is developed from which a generalized method for compensating the undesirable circumstance is formulated.
Even …
Wide-Band Gap Devices For Dc Breaker Applications, Olukayode O. Sodipe
Wide-Band Gap Devices For Dc Breaker Applications, Olukayode O. Sodipe
Master's Theses
With the increasing interest in wide-band gap devices, their potential benefits in power applications have been studied and explored with numerous studies conducted for both SiC and GaN devices. This thesis investigates the use of wide-band gap devices as the switching element in a semiconductor DC breaker. It involves the design of an efficient semiconductor DC breaker, its simulation in SPICE, construction of a hardware prototype and the comparative study of SiC and Si versions of the aforementioned breaker. The results obtained from the experiments conducted in the process of concluding this thesis show that the SiC version of the …
Design And Fabrication Techniques Of Devices For Embedded Power Active Contact Lens, Errol Heradio Leon
Design And Fabrication Techniques Of Devices For Embedded Power Active Contact Lens, Errol Heradio Leon
Master's Theses
This thesis designed and fabricated various devices that were interfaced to an IC for an active contact lens that notifies the user of an event by detection of an external wireless signal. The contact lens consisted of an embedded antenna providing communication with a 2.4GHz system, as well as inductive charging at an operating frequency of 13.56 MHz. The lens utilized a CBC005 5µAh thin film battery by Cymbet and a manufactured graphene super capacitor as a power source. The custom integrated circuit (IC) was designed using the On Semiconductor CMOS C5 0.6 µm process to manage …
Characterization Of Two Vernier-Tuned Distributed Bragg Reflector (Vt-Dbr) Lasers Used In Swept Source Optical Coherence Tomography (Ss-Oct), Greg M. Bergdoll
Characterization Of Two Vernier-Tuned Distributed Bragg Reflector (Vt-Dbr) Lasers Used In Swept Source Optical Coherence Tomography (Ss-Oct), Greg M. Bergdoll
Master's Theses
Insight Photonic Solutions Inc. has continued to develop their patented VT-DBR laser design; these wavelength tunable lasers promise marked image-quality and acquisition time improvements in SS-OCT applications.
To be well suited for SS-OCT, tunable lasers must be capable of producing a highly linear wavelength sweep across a tuning range well-matched to the medium being imaged; many different tunable lasers used in SS-OCT are compared to identify the optimal solution.
This work electrically and spectrally characterizes two completely new all-semiconductor VT-DBR designs to compare, as well. The Neptune VT-DBR, an O-band laser, operates around the 1310 nm range and is a …
Hybrid Silicon Mode-Locked Laser With Improved Rf Power By Impedance Matching, Bassem M. Tossoun
Hybrid Silicon Mode-Locked Laser With Improved Rf Power By Impedance Matching, Bassem M. Tossoun
Master's Theses
The mode-locked laser diode (MLLD) finds a lot of use in applications such as ultra high-speed data processing and sampling, large-capacity optical fiber communications based on optical time-division multiplexing (OTDM) systems. Integrating mode-locked lasers on silicon makes way for highly integrated silicon based photonic communication devices. The mode-locked laser being used in this thesis was built with Hybrid Silicon technology. This technology, developed by UC Santa Barbara in 2006, introduced the idea of wafer bonding a crystalline III- V layer to a Silicon-on-insulator (SOI) substrate, making integrated lasers in silicon chips possible.
Furthermore, all mode-locked lasers produce phase noise, which …
Mos Current Mode Logic (Mcml) Analysis For Quiet Digital Circuitry And Creation Of A Standard Cell Library For Reducing The Development Time Of Mixed Signal Chips, David Marusiak
Master's Theses
Many modern digital systems use forms of CMOS logical implementation due to the straight forward design nature of CMOS logic and minimal device area since CMOS uses fewer transistors than other logic families. To achieve high-performance requirements in mixed-signal chip development and quiet, noiseless circuitry, this thesis provides an alternative toCMOSin the form of MOS Current Mode Logic (MCML). MCML dissipates constant current and does not produce noise during value changing in a circuit CMOS circuits do. CMOS logical networks switch during clock ticks and with every device switching, noise is created on the supply and ground to deal with …
Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda
Investigation Of Degradation Effects Due To Gate Stress In Gan-On-Si High Electron Mobility Transistors Through Analysis Of Low Frequency Noise, Michael Curtis Meyer Masuda
Master's Theses
Gallium Nitride (GaN) high electron mobility transistors (HEMT) have superior performance characteristics compared to Silicon (Si) and Gallium Arsenide (GaAs) based transistors. GaN is a wide bandgap semiconductor which allows it to operate at higher breakdown voltages and power. Unlike traditional semiconductor devices, the GaN HEMT channel region is undoped and relies on the piezoelectric effect created at the GaN and Aluminum Gallium Nitride (AlGaN) heterojunction to create a conduction channel in the form of a quantum well known as the two dimensional electron gas (2DEG). Because the GaN HEMTs are undoped, these devices have higher electron mobility crucial for …
Characterization And Modeling Of An O-Band 1310 Nm Sampled-Grating Distributed Bragg Reflector (Sg-Dbr) Laser For Optical Coherence Tomography (Oct) Applications, Desmond Charles Talkington
Characterization And Modeling Of An O-Band 1310 Nm Sampled-Grating Distributed Bragg Reflector (Sg-Dbr) Laser For Optical Coherence Tomography (Oct) Applications, Desmond Charles Talkington
Master's Theses
In this project, the performance aspects of a new early generation 1310 nm Sampled-Grating Distributed Bragg Reflector (SG-DBR) semiconductor laser are investigated. SG-DBR lasers are ideal for Source Swept Optical Coherence Tomography (SS-OCT), a Fourier-Domain based approach for OCT, necessitating a tunable wavelength source. Three internal sections control the frequency output for tuning, along with two amplifiers for amplitude control. These O-band SG-DBR devices are now being produced in research quantities. SG-DBR lasers have been produced at 1550 and 1600 nm for some times. Fundamental questions regarding the performance of the 1310 nm devices must be quantified. Standard metrics including …
Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom
Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom
Master's Theses
Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.
In this thesis, the DC, …
Fabrication And Characterization Of Torsional Micro-Hinge Structures, Mike Madrid Marrujo
Fabrication And Characterization Of Torsional Micro-Hinge Structures, Mike Madrid Marrujo
Master's Theses
ABSTRACT
Fabrication and Characterization of Torsional Micro-Hinge Structures
Mike Marrujo
There are many electronic devices that operate on the micrometer-scale such as Digital Micro-Mirror Devices (DMD). Micro actuators are a common type of DMD that employ a diaphragm supported by torsional hinges, which deform during actuation and are critical for the devices to have high stability and reliability. The stress developed within the hinge during actuation controls how the actuator will respond to the actuating force. Electrostatically driven micro actuators observe to have a fully recoverable non-linear viscoelastic response. The device consists of a micro-hinge which is suspended by two …
Light Extraction Enhancement Of Gan Based Leds Using Top Gratings, Patterned Sapphire Substrates, And Reflective Surfaces, Greg Chavoor
Light Extraction Enhancement Of Gan Based Leds Using Top Gratings, Patterned Sapphire Substrates, And Reflective Surfaces, Greg Chavoor
Master's Theses
In the last 15 years, an immense amount of research has gone into developing high efficiency Gallium Nitride based light emitting diodes (LED). These devices have become increasingly popular in LED displays and solid state lighting. Due to the large difference in refractive index between GaN and Air, a significant amount of light reflects at the boundary and does not escape the device. This drawback decreases external quantum efficiency (EQE) by minimizing light extraction. Scientists and engineers continue to develop creative solutions to enhance light extraction. Some solutions include surface roughening, patterned sapphire substrates, and reflective layers.
This study proposes …
Energy Harvesting From Elliptical Machines: Dc-Dc Converter Design Using Sepic Topology, Martin Kou
Energy Harvesting From Elliptical Machines: Dc-Dc Converter Design Using Sepic Topology, Martin Kou
Master's Theses
Cal Poly’s ongoing Energy Harvesting from Exercise Machines (EHFEM) project is a very convenient and cost-effective way for generating DC power from physical exercise and sending it back to the electrical grid as AC power, providing a renewable energy source for the future. The EHFEM project consists of numerous subprojects involving converting different types of exercise machines for power generation. This project is a continuation of one of the previous subprojects, specifically involving an elliptical machine, and focuses on improving system functionality at different machine settings without altering the elliptical user’s experience by selecting a new DC-DC converter design, while …
Full Custom Vlsi Design Of On-Line Stability Checkers, Chris Y. Lee
Full Custom Vlsi Design Of On-Line Stability Checkers, Chris Y. Lee
Master's Theses
A stability checker is a clocked storage element, much like a flip-flop, which detects unstable and late signals in the pipeline of a digital system. The On-line stability checker operates concurrently with its associated circuit-under-test (CUT). This thesis describes the full custom very-large-scale integration (VLSI) design and testing process of On-Line Stability Checkers. The goals of this thesis are to construct and test Stability Checker designs, and to create a design template for future class projects in the EE 431 Computer-Aided Design (CAD) of VLSI Devices course at Cal Poly.
A method for concurrent fault testing called On-line Stability Checking …
Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu
Enhanced Light Extraction Efficiency From Gan Light Emitting Diodes Using Photonic Crystal Grating Structures, Simeon S. Trieu
Master's Theses
Gallium nitride (GaN) light emitting diodes (LED) embody a large field of research that aims to replace inefficient, conventional light sources with LEDs that have lower power, higher luminosity, and longer lifetime. This thesis presents an international collaboration effort between the State Key Laboratory for Mesoscopic Physics in Peking University (PKU) of Beijing, China and the Electrical Engineering Department of California Polytechnic State University, San Luis Obispo. Over the course of 2 years, Cal Poly’s side has simulated GaN LEDs within the pure blue wavelength spectrum (460nm), focusing specifically on the effects of reflection gratings, transmission gratings, top and bottom …
Negative Conductance Load Modulation Rf Power Amplifier, Cody R. Neslen
Negative Conductance Load Modulation Rf Power Amplifier, Cody R. Neslen
Master's Theses
The number of mobile wireless devices on the market has increased substantially over the last decade. The frequency spectrum has become crowded due to the number of devices demanding radio traffic and new modulation schemes have been developed to accommodate the number of users. These new modulation schemes have caused very poor efficiencies in power amplifiers for wireless transmission systems due to high peak-to-average power ratios (PAPR). This thesis first presents the issue with classical power amplifiers in modern modulation systems. A brief overview of current attempts to mitigate this issue is provided. A new RF power amplifier topology is …
Analysis & Design Of Improved Multiphase Interleaving Dc-Dc Converter With Input-Output Bypass Capacitor, Rudi Rudianto
Analysis & Design Of Improved Multiphase Interleaving Dc-Dc Converter With Input-Output Bypass Capacitor, Rudi Rudianto
Master's Theses
As the transistor count per chip in computer microprocessors surpasses one billion, the semiconductor industry has become more and more concerned with meeting processor’s power requirements. This poses a design challenge for the power supply module, especially when the processor operates at low voltage range. For example, the electrical requirement for the newest Intel microprocessors has exceeded 100A with an input voltage of approximately 1V. To overcome this problem, multiphase DC-to-DC converters encased in a voltage regulator module (VRM) have become the standard means of supplying power to computer microprocessor.
This study proposes a new topology for the multiphase DC-to-DC …
Advanced Thermosonic Wire Bonding Using High Frequency Ultrasonic Power: Optimization, Bondability, And Reliability, Minh-Nhat Ba Le
Advanced Thermosonic Wire Bonding Using High Frequency Ultrasonic Power: Optimization, Bondability, And Reliability, Minh-Nhat Ba Le
Master's Theses
Gold wire bonding typically uses 60 KHz ultrasonic frequency. Studies have been reported that increasing ultrasonic frequency from 60KHz to 120KHz can decrease bonding time, lower bonding temperature, and/or improve the bondability of Au metalized organic substrates. This thesis presents a systematic study of the effects of 120 KHz ultrasonic frequency on the reliability of fine pitch gold wire bonding. Two wire sizes, 25.4 and 17.8 μm in diameter (1.0 and 0.7 mil, respectively) were used. The gold wires were bonded to metalized pads over organic substrates with five different metallization. The studies were carried out using a thermosonic ball …
Optimization Of Gan Laser Diodes Using 1d And 2d Optical Simulations, Sean Richard Keali'i Jobe
Optimization Of Gan Laser Diodes Using 1d And 2d Optical Simulations, Sean Richard Keali'i Jobe
Master's Theses
This paper studies the optical properties of a GaN Laser Diode (LD). Through simulation, the GaN LD is optimized for the best optical confinement factor. It is found that there are optimal thicknesses of each layer in the diode that yield the highest optical confinement factor. There is a strong relationship between the optical confinement factor and lasing threshold—a higher optical confinement factor results in a lower lasing threshold. Increasing optical confinement improves lasing efficiency. Blue LDs are important to the future of lighting sources as they represent the final color in the RGB spectrum that does not have a …