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Applying X-Ray Microscopy And Finite Element Modeling (Fem) To Identify The Mechanism Of Stress-Assisted Void Growth In Through Silicon Via (Tsv), Lay Wai Kong
Legacy Theses & Dissertations (2009 - 2024)
Fabricating through-silicon vias (TSVs) is challenging, especially for conformally filled TSVs, often hampered by the seam line and void inside the TSVs. Stress-assisted void growth in TSVs has been studied by finite element stress modeling and X-ray computed tomography (XCT). Because X-ray imaging does not require TSVs to be physically cross-sectioned, the same TSV can be imaged before and after annealing. Using 8 keV laboratory-based XCT, voids formed during copper electroplating are observed in as-deposited samples and void growth is observed at the void location after annealing. We hypothesize that the mechanism generating voids is hydrostatic stress-assisted void growth. Stresses …