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Chemical Vapor Deposition Of Thin Films For Ulsi Interconnect Metallization, Lidong Wang
Chemical Vapor Deposition Of Thin Films For Ulsi Interconnect Metallization, Lidong Wang
LSU Doctoral Dissertations
We have studied the kinetics of copper chemical vapor deposition (CVD) for interconnect metallization using solution delivery of Cu(hfac)2 (Cu(II) hexafluoroacetyl-acetonate) dissolved in isopropanol. We observe a growth rate of 17.7 „b 1.5 nm/min at reference conditions of 300„aC substrate temperature, 0.025 Torr Cu(hfac)2 partial pressure, 1.6 Torr isopropanol (reducing agent), and 80 Torr H2 (carrier gas). The film resistivity approaches the bulk value of copper for film thickness greater than 100 nm. Reaction order experiments show first-order kinetics with respect to Cu(hfac)2 partial pressure and zero-order with respect to isopropanol. A series reaction mechanism including three kinetically significant steps …
Intrinsic Stress And High Temperature Properties Of Metal-Contanining Hydrogenated Amorphous Carbon Coatings, Bo Shi
LSU Doctoral Dissertations
A detailed examination of the intrinsic stress development and mechanical properties of titanium-containing hydrogenated amorphous carbon (Ti-C:H) and W-C:H coatings, deposited in an inductively coupled plasma (ICP) assisted hybrid chemical/physical vapor deposition (CVD/PVD) environment was carried out. Intrinsic stresses within those coatings were found to be compressive and dependent on compositions. The intrinsic compression within Ti-C:H was further shown to be significantly influenced by the energy of ionic species bombarding the substrate during growth. The results suggested that ion bombardment played a significant role in intrinsic stress generation within Ti-C:H, and was likely to influence stress development in other low …