Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Engineering
Crystal Growth, Characterization And Anisotropic Electrical Properties Of Gase Single Crystals For Thz Source And Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, R. D. Rauh
Crystal Growth, Characterization And Anisotropic Electrical Properties Of Gase Single Crystals For Thz Source And Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, R. D. Rauh
Krishna C. Mandal
The single crystal growth of large semi‐insulating GaSe by the vertical Bridgman technique using zone‐refined selenium (Se) and HP gallium (Ga) is described. The grown crystals (up to 10 cm long and 2.5 cm diameter) have been characterized thoroughly by X‐ray diffraction (XRD), energy dispersive analysis by x‐rays (EDAX), optical absorption/transmission, X‐ray photoelectron spectroscopy (XPS), charge carrier electrical property measurements, second harmonic test, and radiation detection measurements.
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Tb3+-Doped K Pb2Br5: Low-Energy Phonon Mid-Infrared Laser Crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, S. A. Payne
Krishna C. Mandal
No abstract provided.