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Design And Fabrication Of Tri-Gated Finfet, Mohammed R. Rahman

Journal of the Microelectronic Engineering Conference

A Tn Gated Fin Field Effect Transistor is on of the many novel devices that may be replacing planar MOSFETs, by reducing short channel effects. The FinFET has emerged as one of the most promising double gate structures primarily because of its ease of manufacturing. There are still significant challenges to overcome it in order to make the process available commercially. The Tri-Gated FinFET is tri-gated meaning that the gate overlaps the top and the two sides of the FIN. Three dimensionally the gate depletes three surfaces of the FIN, which results in a higher drive current relative to a …