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Design And Fabrication Of Finfets On Soi Substrates, Steven D. Kirby
Design And Fabrication Of Finfets On Soi Substrates, Steven D. Kirby
Journal of the Microelectronic Engineering Conference
A Fin Field Effect Transistor (FinFET) is one of several novel devices that may be used in the future to minimize short channel effects. The FinFET is fabricated on silicon on insulator (SOI) substrate and uses basic integrated circuit processing techniques to obtain a double gate structure. The double gate structure helps to improve subthreshold characteristics and provides low leakage current. The objective of this project was to improve the FinFET device built at RIT. Functioning FinFETs were designed and fabricated previously at RIT. The new design and process changes will help in the understanding of issues found in previous …
Design, Simulation And Fabrication Of Insulated Gate Bipolar Transistors (Igbt), Tejas K. Jhaveri
Design, Simulation And Fabrication Of Insulated Gate Bipolar Transistors (Igbt), Tejas K. Jhaveri
Journal of the Microelectronic Engineering Conference
This project serves as a study to determine the feasibility of the current CMOS toolsets and processes available at Semiconductor & Microsystems Fabrication Laboratory (SMFL) for the fabrication of whole wafer power devices. Several designs and devices were explored. The Insulated Gate Bipolar Transistor (~LGBT) is a device widely used for high power electronic applications and was selected for this study. This device has bipolar current flow and a MOS gate thus combining advantages of both the Double diffused MOS (DMOS) and Power Bipolar junction transistor. Prototypes consisting of transistors with varying densities, gate lengths and gate widths were fabricated …