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Modeling And Characterization Of P-Type Silicon Carbide Gate Turn Off Thyristors, Osama Shihadeh Saadeh
Modeling And Characterization Of P-Type Silicon Carbide Gate Turn Off Thyristors, Osama Shihadeh Saadeh
Graduate Theses and Dissertations
Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promising technology for next generation power electronic applications ranging for electric vehicles to grid-connected power routing and conversion interfaces. Several devices have been developed, and even some have been released commercially, including diodes, MOSFETs, JFETs, thyristors, gate turn-off thyristors, and IGBTs. The model development, characterization and experimental validation of SiC p-type Gate Turn-off Thyristors (GTO) is presented in this work. The GTO device in this work is being used as part of a SiC-based solid-state fault current limiter under development at the University of Arkansas' …
Modeling Of Sic P-Channel Insulated Gate Bipolar Transistors (Igbts), Mahmood Saadeh
Modeling Of Sic P-Channel Insulated Gate Bipolar Transistors (Igbts), Mahmood Saadeh
Graduate Theses and Dissertations
A new physics-based IGBT compact model has been developed for circuit simulation of silicon (Si) or silicon carbide (SiC) devices. The model accurately predicts the steady-state output, transfer and switching characteristics of the IGBT under a variety of different conditions. This is the first IGBT model to predict the behavior of p-channel SiC IGBTs. Previous work on IGBT models has focused on Si n-channel IGBTs [1-3]. This unified model is not limited to SiC p-channel IGBTs; the user has the option to select between Si or SiC, and n-channel or p-channel, making it the first IGBT model that captures the …