Engineering Commons^™

Fabrication And Non-Covalent Functionalization And Characterization Of Graphene-Based Devices On Novel Substrate Cadmium Trithiophosphate (Iv) — Cdps, Abayomi Omotola Omolewu

Graduate Theses and Dissertations

With graphene at the center of several application areas such as sensing, circuits, high-frequency devices for communication systems, etc., it is crucial to understand how the intrinsic properties of devices made from graphene and other materials like platinum and palladium nanoparticles affect the performance of such devices for the specific application area. Many graphene-based devices for different application areas have focused mainly on the material composition of the graphene-based devices and how it affects performance parameters for the specific application. However, it would be insightful to understand how the intrinsic electrical properties of the graphene devices for different applications affect …

Investigation Of Critical Technologies Of Chemical Vapor Deposition For Advanced (Si)Gesn Materials, Joshua Matthew Grant

Graduate Theses and Dissertations

The development of new materials for efficient optoelectronic devices from Group IV elements is the heart of Group IV photonics. This has direct ties to modern technology as the foundation for the electronics industry is silicon. This has driven the development of silicon-based optoelectronics using these other Group IV materials as silicon is a poor optical material due to its indirect band gap when compared to the III-V semiconductors that are used by most of the optoelectronics industry. While efforts have been made to integrate III-V materials onto silicon substrates, the incompatibility with the complementary metal oxide semiconductor process has …

Epitaxial Growth Of Silicon On Poly-Crystalline Si Seed Layer At Low Temperature By Using Hot Wire Chemical Vapor Deposition, Manal Abdullah Aldawsari

Graduate Theses and Dissertations

There has been a growing interest in using low cost material as a substrate for the large grained polycrystalline silicon photovoltaic devices. The main property of those devices is the potential of obtaining high efficiency similar to crystalline Si devices efficiency yet at much lower cost because of the thin film techniques. Epitaxial growth of Si at low temperatures on low cost large grained seed layers, prepared by aluminum induced crystallization method (AIC), using hot wire chemical vapor deposition (HWCVD) system is investigated in this thesis. In this work, different parameters have been studied in order to optimize the growth …

Large-Scale Graphene Film Deposition For Monolithic Device Fabrication, Khaled Al-Shurman

Graduate Theses and Dissertations

Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors.

The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an …

Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock

Graduate Theses and Dissertations

Graphene, what some are terming the "new silicon", has the possibility of revolutionizing technology through nanoscale design processes. Fabrication of graphene for device processing is limited largely by the temperatures used in conventional deposition. High temperatures are detrimental to device design where many different materials may be present. For this reason, graphene synthesis at low temperatures using plasma-enhanced chemical vapor deposition is the subject of much research. In this thesis, a tool for ultra-high vacuum plasma-enhanced chemical vapor deposition (UHV-PECVD) and accompanying subsystems, such as control systems and alarms, are designed and implemented to be used in future graphene growths. …