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Full-Text Articles in Engineering
High-Pressure Torsion-Induced Grain Growth In Electrodeposited Nanocrystalline Ni, X. Z. Liao, A. R. Kilmametov, R. Z. Valiev, Hongsheng Gao, Xiaodong Li, A. K. Mukherjee, J. F. Blingert, Y. T. Zhu
High-Pressure Torsion-Induced Grain Growth In Electrodeposited Nanocrystalline Ni, X. Z. Liao, A. R. Kilmametov, R. Z. Valiev, Hongsheng Gao, Xiaodong Li, A. K. Mukherjee, J. F. Blingert, Y. T. Zhu
Faculty Publications
Deformation-induced grain growth has been reported in nanocrystalline (nc) materials under indentation and severe cyclic loading, but not under any other deformation mode. This raises an issue on critical conditions for grain growth in nc materials. This study investigates deformation-induced grain growth in electrodeposited nc Ni during high-pressure torsion (HPT). Our results indicate that high stress and severe plastic deformation are required for inducing grain growth, and the upper limit of grain size is determined by the deformation mode and parameters. Also, texture evolution suggests that grain-boundary-mediated mechanisms played a significant role in accommodating HPT strain.
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Faculty Publications
The authors have fabricated combinatorial Ni–Ti–Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering to investigate flatband voltage shift (ΔVfb) , work function (Φm) , and leakage current density (JL) variations. A more negative ΔVfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φm near the Ti-rich corners and higher Φm near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed Φm variations. Combinatorial methodologies prove to be useful …