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Articles 1 - 9 of 9
Full-Text Articles in Engineering
In-Situ Study Of E-Beam Al And Hf Metal Deposition On Native Oxide Inp (100), H. Dong, Santosh Kc, A. Azcatl, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, K. Cho, R. Wallace
In-Situ Study Of E-Beam Al And Hf Metal Deposition On Native Oxide Inp (100), H. Dong, Santosh Kc, A. Azcatl, W. Cabrera, X. Qin, B. Brennan, D. Zhernokletov, K. Cho, R. Wallace
Faculty Publications
The interfacial chemistry of thin Al (∼3 nm) and Hf (∼2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 °C has also been characterized. …
A Clamped Dual-Ridged Waveguide Measurement System For The Broadband, Nondestructive Characterization Of Sheet Materials, Milo W. Hyde Iv, Michael J. Havrilla
A Clamped Dual-Ridged Waveguide Measurement System For The Broadband, Nondestructive Characterization Of Sheet Materials, Milo W. Hyde Iv, Michael J. Havrilla
Faculty Publications
A novel two-port probe which uses dual-ridged waveguides for the nondestructive, broadband characterization of sheet materials is presented. The new probe is shown to possess approximately 2 to 3 times the bandwidth of traditional coaxial and rectangular/circular waveguide probe systems while maintaining the structural robustness characteristic of rectangular/circular waveguide probe systems. The theoretical development of the probe is presented, namely, by applying Love’s equivalence theorem and enforcing the continuity of transverse fields at the dual-ridged waveguide apertures, a system of coupled magnetic field integral equations is derived. The system of coupled magnetic field integral equations is solved using the method …
In Situ Study Of The Role Of Substrate Temperature During Atomic Layer Deposition Of Hfo2 On Inp, H. Dong, Santosh Kc, X. Qin, B. Brennan, S. Mcdonnell, D. Zhernokletov, C. Hinkle, J. Kim, K. Cho, R. Wallace
In Situ Study Of The Role Of Substrate Temperature During Atomic Layer Deposition Of Hfo2 On Inp, H. Dong, Santosh Kc, X. Qin, B. Brennan, S. Mcdonnell, D. Zhernokletov, C. Hinkle, J. Kim, K. Cho, R. Wallace
Faculty Publications
The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO2 on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO2 at different temperatures. An (NH4)2 S treatment is seen to effectively remove native oxides and passivate the InP surfaces …
Enhanced Reducibility And Conductivity Of Na/K-Doped Srti0.8Nb0.2O3, Guoliang Xiao, Sirikanda Nuansaeng, Lei Zhang, Suwit Suthirakun, Andreas Heyden, Hans-Conrad Zur Loye, Fanglin Chen
Enhanced Reducibility And Conductivity Of Na/K-Doped Srti0.8Nb0.2O3, Guoliang Xiao, Sirikanda Nuansaeng, Lei Zhang, Suwit Suthirakun, Andreas Heyden, Hans-Conrad Zur Loye, Fanglin Chen
Faculty Publications
Donor and acceptor co-doped SrTiO3 materials have shown interesting features in their conductivity and reducibility. In this work, 10 mol% Na+ or K+ as acceptor dopants have been introduced into the A-site of donor-doped strontium titanate, SrTi0.8Nb0.2O3, and the doping impact on their properties has been studied. By doping with Na or K, the sinterability of SrTi0.8Nb0.2O3 in reducing atmospheres has been improved. Na0.1Sr0.9Ti0.8Nb0.2O3 and K0.1Sr0.9Ti0.8Nb0.2O3 show metallic …
Indium Diffusion Through High-K Dielectrics In High-K/Inp Stacks, H. Dong, W. Cabrera, R. Galatage, Santosh Kc, B. Brennan, X. Qin, S. Mcdonnell, D. Zhernokletov, C. Hinkle, K. Cho, Y. Chabal, R. Wallace
Indium Diffusion Through High-K Dielectrics In High-K/Inp Stacks, H. Dong, W. Cabrera, R. Galatage, Santosh Kc, B. Brennan, X. Qin, S. Mcdonnell, D. Zhernokletov, C. Hinkle, K. Cho, Y. Chabal, R. Wallace
Faculty Publications
Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.High mobility III-V channel materials are contenders to replace Si in semiconductor devices like metal oxide semiconductor filed effect transistors (MOSFETs) for the sub 22 nm technology node.1 Extensive research is being carried out to determine the validity of these III-V materials for use as the channel, in a variety of …
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Faculty Publications
We find Mn surface segregation for single crystals of Mn doped Li2B4O7, nominally Li1.95Mn0.05B4O7(001), but as the temperature increases, evidence of this Mn surface segregation diminishes significantly. At room temperature, the surface photovoltaic charging is significant for this pyroelectric material but is quenched at a temperature well below that seen for the undoped Li2B4O7 samples. The suppression of surface charging in the region of 120 °C that accompanies the temperature of Mn dissolution in the bulk of Li2B4 …
First Principles Study On Inp (001)-(2 × 4) Surface Oxidation, Santosh Kc, Weichao Wang, Hong Dong, Ka Xiong, Roberto Longo, Robert Wallace, Kyeongjae Cho
First Principles Study On Inp (001)-(2 × 4) Surface Oxidation, Santosh Kc, Weichao Wang, Hong Dong, Ka Xiong, Roberto Longo, Robert Wallace, Kyeongjae Cho
Faculty Publications
A theoretical study of the oxidation of InP(001)-(2 × 4) surface is performed using density functional theory methods. Our results on surface oxidation show that the oxygen adsorption does not produce any gap states in the bulk InP band gap, due to the saturation of surface In dangling bonds, whereas substitutional oxygen atoms produce gap states. This study also shows that the surface stability increases with the oxygen content, indicating a strong tendency for surface oxidation. Our results help to clarify the origin of surface gap states upon surface oxidation and provide an insight at the atomic level the mechanism …
Interfacial Bonding And Electronic Structure Of Hfo2/Gasb Interfaces: A First-Principles Study, Ka Xiong, Wei-Hua Wang, Dmitry Zhernokletov, Santosh Kc, Roberto Longo, R. Wallace, Kyeongjae Cho
Interfacial Bonding And Electronic Structure Of Hfo2/Gasb Interfaces: A First-Principles Study, Ka Xiong, Wei-Hua Wang, Dmitry Zhernokletov, Santosh Kc, Roberto Longo, R. Wallace, Kyeongjae Cho
Faculty Publications
The interfacial bonding and electronic structure of HfO2/GaSb interfaces has been investigated through first principles calculations. The calculated electronic structures of these interfaces reveal that some O-rich interfaces are semiconducting interfaces without any gap states. In contrast, for the interfaces with lower interfacial O content, gap states appear in the GaSb band gap, close to the conduction band. The valence band offsets are found to vary from 2.2 eV to 3.6 eV, depending on the interfacial O content. Our results suggest that GaSb is a suitable material to form high quality interface with HfO2.
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers
Faculty Publications
High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to …