Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Faculty Publications

Electronic Devices and Semiconductor Manufacturing

MEMS

Publication Year

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Thermal Management Using Mems Bimorph Cantilever Beams, Ronald A. Coutu Jr., Robert S. Lafleur, John P. Walton, Laverne A. Starman Sep 2016

Thermal Management Using Mems Bimorph Cantilever Beams, Ronald A. Coutu Jr., Robert S. Lafleur, John P. Walton, Laverne A. Starman

Faculty Publications

This paper examines a passive cooling technique using microelectromechanical systems (MEMS) for localized thermal management of electronic devices. The prototype was designed using analytic equations, simulated using finite element methods (FEM), and fabricated using the commercial PolyMUMPs™ process. The system consisted of an electronic device simulator (EDS) and MEMS bimorph cantilever beams (MBCB) array with beams lengths of 200, 250, and 300 μm that were tested to characterize deflection and thermal behavior. The specific beam lengths were chosen to actuate in response to heating associated with the EDS (i.e. the longest beams actuated first corresponding to the hottest portion of …


Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey Jan 2008

Performance Comparison Of Pb(Zr0.52Ti0.48)O3-Only And Pb(Zr0.52Ti0.48)O3-On-Silicon Resonators, Hengky Chandrahalim, Sunil A. Bhave, Ronald G. Polcawich, Jeff Pulskamp, Dan Judy, Roger Kaul, Madan Dubey

Faculty Publications

This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept …