Engineering Commons^™

Iii-Nitride Transistors With Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan

Faculty Publications

AlGaN∕GaNheterostructure field-effect transistor design using capacitively coupled contacts (C³HFET) is presented. Insulated-gate [C³ metal-oxide-semiconductor HFET(C³MOSHFET)] has also been realized. The capacitively coupled source, gate, and drain of C3 device do not require annealedOhmic contacts and can be fabricated using gate alignment-free technology. For typical AlGaN∕GaNheterostructures, the equivalent contact resistance of C³ transistors is below 0.6Ωmm. In rf-control applications, the C³HFET and especially the C³MOSHFET have much higher operating rf powers as compared to HFETs.C³ design is instrumental for studying the two-dimensional electron gas transport in other wide band gap …